Samsung M3 93T5750CZA-CE6 2GB vs Crucial Technology BL8G30C15U4BL.M8FE1 8GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

Crucial Technology BL8G30C15U4BL.M8FE1 8GB

Crucial Technology BL8G30C15U4BL.M8FE1 8GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 17.3

测试中的平均数值
更快的写入速度，GB/s

2,622.0 14.1

测试中的平均数值

Crucial Technology BL8G30C15U4BL.M8FE1 8GB

需要考虑的原因
Crucial Technology BL8G30C15U4BL.M8FE1 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 77

左右 -175% 更低的延时
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

Crucial Technology BL8G30C15U4BL.M8FE1 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 28
读取速度，GB/s

3,405.2 17.3
写入速度，GB/s

2,622.0 14.1
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

763 3367

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Crucial Technology BL8G30C15U4BL.M8FE1 8GB

Crucial Technology BL8G30C15U4BL.M8FE1 8GB

Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

Crucial Technology BLS16G4S26BFSD.16FD 16GB

Crucial Technology BLS16G4S26BFSD.16FD 16GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Crucial Technology BLS8G4D26BFSB.16FBD2 8GB

Crucial Technology BLS8G4D26BFSB.16FBD2 8GB

Kingston KHX318C10FR/8G 8GB

Kingston KHX318C10FR/8G 8GB

Kingston HP28D4S7D8HA-16X 16GB

Kingston HP28D4S7D8HA-16X 16GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

G Skill Intl F4-4000C18-8GVK 8GB

G Skill Intl F4-4000C18-8GVK 8GB

Kingston KHX3200C18D4/8G 8GB

Kingston KHX3200C18D4/8G 8GB

Apacer Technology GD2.22428S.001 8GB

Apacer Technology GD2.22428S.001 8GB

Kingston 9905471-006.A00LF 4GB

Kingston 9905471-006.A00LF 4GB

Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

Kingston HP669238-071-HYC 4GB

Kingston HP669238-071-HYC 4GB

G Skill Intl F4-4800C19-8GTESC 8GB

G Skill Intl F4-4800C19-8GTESC 8GB

Samsung M378A5244CB0-CTD 4GB

Samsung M378A5244CB0-CTD 4GB

Crucial Technology CT4G4DFS8266.C8FG 4GB

Crucial Technology CT4G4DFS8266.C8FG 4GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Patriot Memory (PDP Systems) 4266 C18 Series 8GB

Patriot Memory (PDP Systems) 4266 C18 Series 8GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Micron Technology 8ATF1G64HZ-2G3E1 8GB

Micron Technology 8ATF1G64HZ-2G3E1 8GB

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

Apacer Technology 78.CAGP7.DFW0C 8GB

Apacer Technology 78.CAGP7.DFW0C 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Crucial Technology BL16G36C16U4BL.M16FE 16GB

Crucial Technology BL16G36C16U4BL.M16FE 16GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

ISD Technology Limited KD48GU880-32A160X 8GB

ISD Technology Limited KD48GU880-32A160X 8GB