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Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CT8G4DFRA266.C4FE 8GB

Samsung M3 93T5750CZA-CE6 2GB vs Crucial Technology CT8G4DFRA266.C4FE 8GB

总分
star star star star star
Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分
star star star star star
Crucial Technology CT8G4DFRA266.C4FE 8GB

Crucial Technology CT8G4DFRA266.C4FE 8GB

差异 规格 评论

差异

Samsung M3 93T5750CZA-CE6 2GB 需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 13.8
    测试中的平均数值
Crucial Technology CT8G4DFRA266.C4FE 8GB 需要考虑的原因
Crucial Technology CT8G4DFRA266.C4FE 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 77
    左右 -133% 更低的延时
  • 更快的写入速度，GB/s
    9.0 left arrow 2,622.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 5300
    左右 4.02 更高的带宽

规格

完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CT8G4DFRA266.C4FE 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 33
  • 读取速度，GB/s
    3,405.2 left arrow 13.8
  • 写入速度，GB/s
    2,622.0 left arrow 9.0
  • 内存带宽，mbps
    5300 left arrow 21300
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    763 left arrow 2553

Samsung M3 93T5750CZA-CE6 2GB RAM的比较

takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB

Crucial Technology CT8G4DFRA266.C4FE 8GB RAM的比较

Corsair CMSX32GX4M2A3200C22 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Corsair CM4X16GC3600C18K2D 16GB
Corsair CM4X16GC3600C18K2D 16GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CT8G4DFRA266.C4FE 8GB
Crucial Technology CT8G4DFRA266.C4FE 8GB
内存RAM
Corsair CM2X1024-6400C4 1GB
Corsair CM2X1024-6400C4 1GB
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Kingston 9965662-009.A00G 16GB
内存RAM
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology CT102464BF160B-16F 8GB
Kingston 99U5704-001.A00G 4GB
Kingston 99U5704-001.A00G 4GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
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Patriot Memory (PDP Systems) PSD416G21332S 16GB
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A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
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G Skill Intl F4-4000C18-8GTZR 8GB
内存RAM
Kingston 99U5474-038.A00LF 4GB
Kingston 99U5474-038.A00LF 4GB
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Neo Forza NMUD480E82-3600 8GB
内存RAM
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Nanya Technology M2F8G64CB8HC9N-DI 8GB
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Avexir Technologies Corporation T-20181206 8GB
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Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
Kingston XVTW4H-MIE 32GB
Kingston XVTW4H-MIE 32GB
内存RAM
Corsair CM2X1024-6400C4 1GB
Corsair CM2X1024-6400C4 1GB
G Skill Intl F4-4000C16-8GTZR 8GB
G Skill Intl F4-4000C16-8GTZR 8GB
内存RAM
Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
G Skill Intl F4-3200C16-8GTZB 8GB
G Skill Intl F4-3200C16-8GTZB 8GB
内存RAM
Corsair CML8GX3M2A1600C9 4GB
Corsair CML8GX3M2A1600C9 4GB
Corsair CMK16GX4M1Z3600C18 16GB
Corsair CMK16GX4M1Z3600C18 16GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
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Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
G Skill Intl F4-2400C17-8GISM 8GB
G Skill Intl F4-2400C17-8GISM 8GB
内存RAM