RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CT8G4SFD8213.C16FBR2 8GB
比较
Samsung M3 93T5750CZA-CE6 2GB vs Crucial Technology CT8G4SFD8213.C16FBR2 8GB
总分
Samsung M3 93T5750CZA-CE6 2GB
总分
Crucial Technology CT8G4SFD8213.C16FBR2 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
更快的读取速度,GB/s
3
17.1
测试中的平均数值
更快的写入速度,GB/s
2,622.0
11.4
测试中的平均数值
需要考虑的原因
Crucial Technology CT8G4SFD8213.C16FBR2 8GB
报告一个错误
低于PassMark测试中的延时,ns
32
77
左右 -141% 更低的延时
更高的内存带宽,mbps
17000
5300
左右 3.21 更高的带宽
规格
完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CT8G4SFD8213.C16FBR2 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
77
32
读取速度,GB/s
3,405.2
17.1
写入速度,GB/s
2,622.0
11.4
内存带宽,mbps
5300
17000
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
763
2903
Samsung M3 93T5750CZA-CE6 2GB RAM的比较
takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB
Crucial Technology CT8G4SFD8213.C16FBR2 8GB RAM的比较
A-DATA Technology AM2U16BC4P2-B05B 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Crucial Technology CT102464BF160B.C16 8GB
Micron Technology 36ASF2G72PZ-2G3A3 16GB
A-DATA Technology ADOVE1A0834E 1GB
G Skill Intl F4-2666C18-32GVK 32GB
A-DATA Technology ADOVE1A0834E 1GB
Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB
SK Hynix HMT351U6CFR8C-H9 4GB
G Skill Intl F4-2400C15-4GNT 4GB
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CT8G4SFD8213.C16FBR2 8GB
SK Hynix HMT351U6CFR8C-H9 4GB
Micron Technology AFLD48EH1P 8GB
Kingston K1N7HK-ELC 2GB
A-DATA Technology DDR4 3600 2OZ 8GB
Kingston ACR256X64D3S1333C9 2GB
Thermaltake Technology Co Ltd R009D408GX2-3000C16B 8GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
G Skill Intl F4-3600C18-16GVK 16GB
Samsung M393A2G40DB1-CRC 16GB
Samsung M393A2G40EB1-CRC 16GB
Kingston KHX2800C14D4/8GX 8GB
Dust Leopard DDR4-2400 C17 8GB 8GB
Kingston 9965433-034.A00LF 4GB
Essencore Limited KD48GU880-34A170X 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Apacer Technology 78.BAGP4.AR50C 4GB
Kingston 99U5584-001.A00LF 4GB
Patriot Memory (PDP Systems) 2800 C18 Series 16GB
报告一个错误
×
Bug description
Source link