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Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CT8G4SFS824A.M8FJ 8GB

Samsung M3 93T5750CZA-CE6 2GB vs Crucial Technology CT8G4SFS824A.M8FJ 8GB

总分
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Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分
star star star star star
Crucial Technology CT8G4SFS824A.M8FJ 8GB

Crucial Technology CT8G4SFS824A.M8FJ 8GB

差异 规格 评论

差异

Samsung M3 93T5750CZA-CE6 2GB 需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 15
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,622.0 left arrow 10.5
    测试中的平均数值
Crucial Technology CT8G4SFS824A.M8FJ 8GB 需要考虑的原因
Crucial Technology CT8G4SFS824A.M8FJ 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 77
    左右 -126% 更低的延时
  • 更高的内存带宽，mbps
    19200 left arrow 5300
    左右 3.62 更高的带宽

规格

完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CT8G4SFS824A.M8FJ 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 34
  • 读取速度，GB/s
    3,405.2 left arrow 15.0
  • 写入速度，GB/s
    2,622.0 left arrow 10.5
  • 内存带宽，mbps
    5300 left arrow 19200
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    763 left arrow 2516

Samsung M3 93T5750CZA-CE6 2GB RAM的比较

takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB

Crucial Technology CT8G4SFS824A.M8FJ 8GB RAM的比较

Kingston 9965525-155.A00LF 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
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Apacer Technology 78.DAGRL.4050C 16GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CT8G4SFS824A.M8FJ 8GB
Crucial Technology CT8G4SFS824A.M8FJ 8GB
内存RAM
Ramos Technology RMB4GB58BCA3-13HC 4GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
G Skill Intl F4-4266C19-8GTRS 8GB
G Skill Intl F4-4266C19-8GTRS 8GB
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Kingston 99U5428-063.A00LF 8GB
Kingston 99U5428-063.A00LF 8GB
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Kingston 9905678-012.A00G 8GB
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Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Crucial Technology CT8G4SFS8266.C8FE 8GB
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内存RAM
Crucial Technology CT51264BF160BJ.M8F 4GB
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Kingston 9905471-006.A01LF 4GB
Kingston 9905471-006.A01LF 4GB
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Micron Technology 16ATF2G64HZ-2G3A1 16GB
内存RAM
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB
Chun Well Technology Holding Limited CL16-18-18 D4-3200
A-DATA Technology DDR4 2400 16GB
A-DATA Technology DDR4 2400 16GB
内存RAM
Avant Technology F641GU67F9333G 8GB
Avant Technology F641GU67F9333G 8GB
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内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
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Kingston KHX2933C17S4/16G 16GB
内存RAM
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Samsung M471B5273CH0-CH9 4GB
Crucial Technology BLS4G4D240FSB.8FARG? 4GB
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内存RAM
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Kingston 9905678-173.A00G 8GB
内存RAM
Peak Electronics 256X64M-67E 2GB
Peak Electronics 256X64M-67E 2GB
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Corsair CMK64GX4M4B3466C16 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Crucial Technology BL8G32C16U4W.8FE 8GB
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