Samsung M3 93T5750CZA-CE6 2GB vs G Skill Intl F4-2133C15-8GRK 8GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

G Skill Intl F4-2133C15-8GRK 8GB

G Skill Intl F4-2133C15-8GRK 8GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 12.7

测试中的平均数值

G Skill Intl F4-2133C15-8GRK 8GB

需要考虑的原因
G Skill Intl F4-2133C15-8GRK 8GB

报告一个错误

低于PassMark测试中的延时，ns

41 77

左右 -88% 更低的延时
更快的写入速度，GB/s

9.5 2,622.0

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

G Skill Intl F4-2133C15-8GRK 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 41
读取速度，GB/s

3,405.2 12.7
写入速度，GB/s

2,622.0 9.5
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

763 2501

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Mushkin 99[2/7/4]204[F/T] 4GB

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Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

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Smart Modular SMS4TDC8C1K0446FCG 8GB

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Essencore Limited KD48GU88C-26N1600 8GB

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Kingston 99U5584-004.A00LF 4GB

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Kingston K9CXF2-MIE 8GB

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Kingston KP223C-ELD 2GB

Kingston KP223C-ELD 2GB

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G Skill Intl F4-4000C18-8GTZSW 8GB

Kingmax Semiconductor KLDE88F-B8KB5 2GB

Kingmax Semiconductor KLDE88F-B8KB5 2GB

Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

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Golden Empire CL16-16-16 D4-3200 4GB

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Kingston 9905474-019.A00LF 2GB

Kingston 9905625-062.A00G 8GB

Kingston 9905625-062.A00G 8GB