Samsung M3 93T5750CZA-CE6 2GB vs G Skill Intl F4-2400C16-8GFX 8GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

G Skill Intl F4-2400C16-8GFX 8GB

G Skill Intl F4-2400C16-8GFX 8GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 16.3

测试中的平均数值
更快的写入速度，GB/s

2,622.0 10.5

测试中的平均数值

G Skill Intl F4-2400C16-8GFX 8GB

需要考虑的原因
G Skill Intl F4-2400C16-8GFX 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 77

左右 -250% 更低的延时
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

G Skill Intl F4-2400C16-8GFX 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 22
读取速度，GB/s

3,405.2 16.3
写入速度，GB/s

2,622.0 10.5
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 9 11 13 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

763 2738

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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SK Hynix HMA81GR7AFR8N-UH 8GB

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Corsair CMK64GX4M4E3200C16 16GB

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Samsung M3 93T5750CZA-CE6 2GB

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G Skill Intl F4-2400C16-8GFX 8GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

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Corsair CM4X16GC3000C15K4 16GB

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Kingston KHX3200C18D4/8G 8GB

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ISD Technology Limited IM44GU48A30-GIIHM 4GB

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Kingston 9905584-016.A00LF 4GB

Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB

Xinshirui (Shenzhen) Electronics Co V01D4LF8GB528528266

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Kingston HX424C15FB/8 8GB

Kingston HX424C15FB/8 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Micron Technology 4ATF51264AZ-2G3E1 4GB

Micron Technology 4ATF51264AZ-2G3E1 4GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

Kingston KF3200C16D4/32GX 32GB

Kingston KF3200C16D4/32GX 32GB