Samsung M3 93T5750CZA-CE6 2GB vs G Skill Intl F4-2800C15-8GRBB 8GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

G Skill Intl F4-2800C15-8GRBB 8GB

G Skill Intl F4-2800C15-8GRBB 8GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 14.2

测试中的平均数值
更快的写入速度，GB/s

2,622.0 11.3

测试中的平均数值

G Skill Intl F4-2800C15-8GRBB 8GB

需要考虑的原因
G Skill Intl F4-2800C15-8GRBB 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 77

左右 -196% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

G Skill Intl F4-2800C15-8GRBB 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 26
读取速度，GB/s

3,405.2 14.2
写入速度，GB/s

2,622.0 11.3
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

763 2978

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Absolute Latency

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最新比较

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Crucial Technology BLE16G4D30AEEA.K16FB 16GB

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A-DATA Technology AD73I1C1674EV 4GB

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Crucial Technology CT16G4DFRA32A.M16FJ1 16GB

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Corsair CMW64GX4M4E3200C16 16GB

Corsair CMW64GX4M4E3200C16 16GB

Crucial Technology CT2K102464BD160B 8GB

Crucial Technology CT2K102464BD160B 8GB

Micron Technology 36ASF2G72PZ-2G6E1 16GB

Micron Technology 36ASF2G72PZ-2G6E1 16GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Corsair CMT16GX4M2C3000C15 8GB

Corsair CMT16GX4M2C3000C15 8GB

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Corsair CMU16GX4M2A2400C16 8GB

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Crucial Technology BL8G32C16U4RL.M8FE1 8GB

Crucial Technology BL8G32C16U4RL.M8FE1 8GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingston ACR26D4S9S8ME-8 8GB

Kingston ACR26D4S9S8ME-8 8GB