Samsung M3 93T5750CZA-CE6 2GB vs G Skill Intl F4-3300C16-4GRKD 4GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

G Skill Intl F4-3300C16-4GRKD 4GB

G Skill Intl F4-3300C16-4GRKD 4GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 14.3

测试中的平均数值
更快的写入速度，GB/s

2,622.0 11.7

测试中的平均数值

G Skill Intl F4-3300C16-4GRKD 4GB

需要考虑的原因
G Skill Intl F4-3300C16-4GRKD 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 77

左右 -208% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

G Skill Intl F4-3300C16-4GRKD 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 25
读取速度，GB/s

3,405.2 14.3
写入速度，GB/s

2,622.0 11.7
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

763 2945

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Crucial Technology BL16G36C16U4R.M8FB1 16GB

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Micron Technology 18HTF12872AY-800F1 1GB

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Ramaxel Technology RMT3020EC58E9F1333 4GB

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SK Hynix HMA81GU6JJR8N-VK 8GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Ramaxel Technology RMSA3260NA78HAF-2666 8GB

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Corsair CMW128GX4M4E3200C16 32GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Micron Technology 4ATF51264AZ-2G3E1 4GB

Micron Technology 4ATF51264AZ-2G3E1 4GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A

Heoriady HX2666CX15D4/4G 4GB

Heoriady HX2666CX15D4/4G 4GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Crucial Technology BLS8G4D32AESBK.M8FE 8GB

Crucial Technology BLS8G4D32AESBK.M8FE 8GB

Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

Crucial Technology BL32G32C16U4R.M16FB1 32GB

Crucial Technology BL32G32C16U4R.M16FB1 32GB