Samsung M3 93T5750CZA-CE6 2GB vs G Skill Intl F4-3600C14-16GTZR 16GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

G Skill Intl F4-3600C14-16GTZR 16GB

G Skill Intl F4-3600C14-16GTZR 16GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 25.6

测试中的平均数值

G Skill Intl F4-3600C14-16GTZR 16GB

需要考虑的原因
G Skill Intl F4-3600C14-16GTZR 16GB

报告一个错误

低于PassMark测试中的延时，ns

25 77

左右 -208% 更低的延时
更快的写入速度，GB/s

20.7 2,622.0

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

G Skill Intl F4-3600C14-16GTZR 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 25
读取速度，GB/s

3,405.2 25.6
写入速度，GB/s

2,622.0 20.7
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

763 4537

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Micron Technology TEAMGROUP-UD4-2400 16GB

Corsair CML16GX3M2A1600C10 8GB

Corsair CML16GX3M2A1600C10 8GB

Crucial Technology BLS4G4D26BFSC.8FBR2 4GB

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A-DATA Technology AD73I1C1674EV 4GB

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Corsair CMK16GX4M2A2400C14 8GB

Kingston 9905403-061.A00LF 2GB

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Crucial Technology CT16G4SFD832A.M16FRS 16GB

Crucial Technology CT16G4SFD832A.M16FRS 16GB