Samsung M3 93T5750CZA-CE6 2GB vs G Skill Intl F4-3600C18-32GTRG 32GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

G Skill Intl F4-3600C18-32GTRG 32GB

G Skill Intl F4-3600C18-32GTRG 32GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 12.9

测试中的平均数值
更快的写入速度，GB/s

2,622.0 12.5

测试中的平均数值

G Skill Intl F4-3600C18-32GTRG 32GB

需要考虑的原因
G Skill Intl F4-3600C18-32GTRG 32GB

报告一个错误

低于PassMark测试中的延时，ns

42 77

左右 -83% 更低的延时
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

G Skill Intl F4-3600C18-32GTRG 32GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 42
读取速度，GB/s

3,405.2 12.9
写入速度，GB/s

2,622.0 12.5
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

763 3126

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Absolute Latency

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

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Apacer Technology GD2.1527WH.002 8GB

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Micron Technology AFLD48EH1P 8GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Elpida EBJ17RG4EFWA-DJ-F 16GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

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G Skill Intl F4-2400C17-8GSXW 8GB

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Micron Technology 16ATF2G64AZ-2G1A1 16GB

Micron Technology 16ATF2G64AZ-2G1A1 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Corsair CMK64GX4M4E3200C16 16GB

Corsair CMK64GX4M4E3200C16 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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G Skill Intl F4-2133C15-4GIS 4GB

G Skill Intl F4-2133C15-4GIS 4GB