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Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-4000C16-16GVKA 16GB

Samsung M3 93T5750CZA-CE6 2GB vs G Skill Intl F4-4000C16-16GVKA 16GB

总分
star star star star star
Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分
star star star star star
G Skill Intl F4-4000C16-16GVKA 16GB

G Skill Intl F4-4000C16-16GVKA 16GB

差异 规格 评论

差异

Samsung M3 93T5750CZA-CE6 2GB 需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 17.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,622.0 left arrow 14.9
    测试中的平均数值
G Skill Intl F4-4000C16-16GVKA 16GB 需要考虑的原因
G Skill Intl F4-4000C16-16GVKA 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    18 left arrow 77
    左右 -328% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-4000C16-16GVKA 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 18
  • 读取速度，GB/s
    3,405.2 left arrow 17.9
  • 写入速度，GB/s
    2,622.0 left arrow 14.9
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    763 left arrow 3871

Samsung M3 93T5750CZA-CE6 2GB RAM的比较

takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB

G Skill Intl F4-4000C16-16GVKA 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT51264BD1339.M16F 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-4000C16-16GVKA 16GB
G Skill Intl F4-4000C16-16GVKA 16GB
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Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
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G Skill Intl F4-4133C19-8GTZKKF 8GB
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内存RAM
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Kingston ACR512X64D3S13C9G 4GB
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内存RAM
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Kingston 9905471-006.A00LF 4GB
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