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Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-4266C17-16GTRGB 16GB

Samsung M3 93T5750CZA-CE6 2GB vs G Skill Intl F4-4266C17-16GTRGB 16GB

总分
star star star star star
Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分
star star star star star
G Skill Intl F4-4266C17-16GTRGB 16GB

G Skill Intl F4-4266C17-16GTRGB 16GB

差异 规格 评论

差异

Samsung M3 93T5750CZA-CE6 2GB 需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 15.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,622.0 left arrow 13.5
    测试中的平均数值
G Skill Intl F4-4266C17-16GTRGB 16GB 需要考虑的原因
G Skill Intl F4-4266C17-16GTRGB 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 77
    左右 -157% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-4266C17-16GTRGB 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 30
  • 读取速度，GB/s
    3,405.2 left arrow 15.7
  • 写入速度，GB/s
    2,622.0 left arrow 13.5
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    763 left arrow 3495

Samsung M3 93T5750CZA-CE6 2GB RAM的比较

takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB

G Skill Intl F4-4266C17-16GTRGB 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Kingston 9965600-012.A02G 16GB
Kingston 9965600-012.A02G 16GB
内存RAM
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
Kingston 9905599-010.A00G 4GB
Kingston 9905599-010.A00G 4GB
内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
Essencore Limited IM44GU48N21-FFFHM 4GB
Essencore Limited IM44GU48N21-FFFHM 4GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Crucial Technology CT8G4SFS8266.M8FD 8GB
Crucial Technology CT8G4SFS8266.M8FD 8GB
内存RAM
AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
Team Group Inc. TEAMGROUP-D4-3600 4GB
Team Group Inc. TEAMGROUP-D4-3600 4GB
内存RAM
SK Hynix HMT151R7TFR4C-H9 4GB
SK Hynix HMT151R7TFR4C-H9 4GB
G Skill Intl F4-3000C15-8GVS 8GB
G Skill Intl F4-3000C15-8GVS 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BLS8G4S240FSDK.8FBD 8GB
Crucial Technology BLS8G4S240FSDK.8FBD 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CM4B8G2J2666A15D 8GB
Corsair CM4B8G2J2666A15D 8GB
内存RAM
Kingston 9965433-034.A00LF 4GB
Kingston 9965433-034.A00LF 4GB
Transcend Information JM3200HLB-8G 8GB
Transcend Information JM3200HLB-8G 8GB
内存RAM
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Corsair CM4X16GE2666C18S4 16GB
Corsair CM4X16GE2666C18S4 16GB
内存RAM
Ramaxel Technology RMT3010EC58E8F1333 2GB
Ramaxel Technology RMT3010EC58E8F1333 2GB
Samsung M378A1G43EB1-CPB 8GB
Samsung M378A1G43EB1-CPB 8GB
内存RAM
Kingston 9905403-437.A01LF 4GB
Kingston 9905403-437.A01LF 4GB
G Skill Intl F4-3000C15-4GVSB 4GB
G Skill Intl F4-3000C15-4GVSB 4GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Mushkin 99[2/7/4]189F 4GB
Mushkin 99[2/7/4]189F 4GB
内存RAM
Kingston HX318C10FK/4 4GB
Kingston HX318C10FK/4 4GB
Corsair CMR32GX4M4A2666C16 8GB
Corsair CMR32GX4M4A2666C16 8GB
内存RAM