Samsung M3 93T5750CZA-CE6 2GB vs G Skill Intl F4-4400C17-16GVK 16GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

G Skill Intl F4-4400C17-16GVK 16GB

G Skill Intl F4-4400C17-16GVK 16GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 22.3

测试中的平均数值

G Skill Intl F4-4400C17-16GVK 16GB

需要考虑的原因
G Skill Intl F4-4400C17-16GVK 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 77

左右 -148% 更低的延时
更快的写入速度，GB/s

20.0 2,622.0

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

G Skill Intl F4-4400C17-16GVK 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 31
读取速度，GB/s

3,405.2 22.3
写入速度，GB/s

2,622.0 20.0
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

763 4051

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT51264BA1339.D16F 4GB

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G Skill Intl F4-3600C18-32GTRG 32GB

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G Skill Intl F4-4000C18-16GTRS 16GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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Kingston HX318C10FK/4 4GB

Kingston HX318C10FK/4 4GB

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Crucial Technology CT8G4DFS824A.C8FBD1 8GB

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Samsung M3 93T5750CZA-CE6 2GB

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Ramaxel Technology RMSA3270MB76H8F2400 2GB

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Kingston KHX318C10FR/8G 8GB

Patriot Memory (PDP Systems) 3000 C18 Series 16GB

Patriot Memory (PDP Systems) 3000 C18 Series 16GB

Samsung M393B2G70BH0-CK0 16GB

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Corsair CMW32GX4M2Z3200C16 16GB

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Nanya Technology NT512T64U88B0BY-3C 512MB

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G Skill Intl F4-3600C14-8GTZRA 8GB

Corsair CMK16GX4M2D3600C18 8GB

Corsair CMK16GX4M2D3600C18 8GB

Kingston KF2666C16D4/16G 16GB

Kingston KF2666C16D4/16G 16GB