Samsung M393B2G70BH0-CK0 16GB vs Corsair CMW32GX4M2Z3200C16 16GB

总分

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分

Corsair CMW32GX4M2Z3200C16 16GB

Corsair CMW32GX4M2Z3200C16 16GB

差异规格评论

差异

Samsung M393B2G70BH0-CK0 16GB

需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB

报告一个错误

Corsair CMW32GX4M2Z3200C16 16GB

需要考虑的原因
Corsair CMW32GX4M2Z3200C16 16GB

报告一个错误

低于PassMark测试中的延时，ns

29 54

左右 -86% 更低的延时
更快的读取速度，GB/s

17.8 9.2

测试中的平均数值
更快的写入速度，GB/s

15.2 8.1

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CK0 16GB

Corsair CMW32GX4M2Z3200C16 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

54 29
读取速度，GB/s

9.2 17.8
写入速度，GB/s

8.1 15.2
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2105 3625

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Wilk Elektronik S.A. GX2426D464S/8GSBS2 8GB

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G Skill Intl F3-12800CL7-4GBXM 4GB

G Skill Intl F4-2133C15-4GRK 4GB

G Skill Intl F4-2133C15-4GRK 4GB

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

Apacer Technology GD2.0918CT.001 4GB

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Team Group Inc. UD5-6400 16GB

Team Group Inc. UD5-6400 16GB

Kingston 9965698-001.A00G 16GB

Kingston 9965698-001.A00G 16GB

Elpida EBJ40EG8BFWB-JS-F 4GB

Elpida EBJ40EG8BFWB-JS-F 4GB

Crucial Technology CT8G4DFD824A.M16FE 8GB

Crucial Technology CT8G4DFD824A.M16FE 8GB

Kingston KHX1600C9S3L/4G 4GB

Kingston KHX1600C9S3L/4G 4GB

Kingston 9905678-033.A00G 4GB

Kingston 9905678-033.A00G 4GB

Kingston 99U5584-007.A00LF 4GB

Kingston 99U5584-007.A00LF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N