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Samsung M3 93T5750CZA-CE6 2GB
InnoDisk Corporation M4UI-AGS1KC0K-C 16GB

Samsung M3 93T5750CZA-CE6 2GB vs InnoDisk Corporation M4UI-AGS1KC0K-C 16GB

总分
star star star star star
Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分
star star star star star
InnoDisk Corporation M4UI-AGS1KC0K-C 16GB

InnoDisk Corporation M4UI-AGS1KC0K-C 16GB

差异 规格 评论

差异

Samsung M3 93T5750CZA-CE6 2GB 需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 18
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,622.0 left arrow 15.1
    测试中的平均数值
InnoDisk Corporation M4UI-AGS1KC0K-C 16GB 需要考虑的原因
InnoDisk Corporation M4UI-AGS1KC0K-C 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 77
    左右 -185% 更低的延时
  • 更高的内存带宽，mbps
    21300 left arrow 5300
    左右 4.02 更高的带宽

规格

完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
InnoDisk Corporation M4UI-AGS1KC0K-C 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 27
  • 读取速度，GB/s
    3,405.2 left arrow 18.0
  • 写入速度，GB/s
    2,622.0 left arrow 15.1
  • 内存带宽，mbps
    5300 left arrow 21300
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    763 left arrow 3711

Samsung M3 93T5750CZA-CE6 2GB RAM的比较

takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB

InnoDisk Corporation M4UI-AGS1KC0K-C 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
InnoDisk Corporation M4UI-AGS1KC0K-C 16GB
InnoDisk Corporation M4UI-AGS1KC0K-C 16GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Corsair CMK16GX4M4B3400C16 4GB
Corsair CMK16GX4M4B3400C16 4GB
内存RAM
Team Group Inc. Team-Elite-1333 4GB
Team Group Inc. Team-Elite-1333 4GB
A-DATA Technology DDR4 3200 8GB
A-DATA Technology DDR4 3200 8GB
内存RAM
SK Hynix HMT425S6CFR6A-PB 2GB
SK Hynix HMT425S6CFR6A-PB 2GB
Micron Technology 16ATF2G64AZ-2G1B1 16GB
Micron Technology 16ATF2G64AZ-2G1B1 16GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Corsair CMD32GX4M4B3866C18 8GB
Corsair CMD32GX4M4B3866C18 8GB
内存RAM
Kingston KHX318C10FR/8G 8GB
Kingston KHX318C10FR/8G 8GB
G Skill Intl F4-2133C15-8GVR 8GB
G Skill Intl F4-2133C15-8GVR 8GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Corsair CMK128GX4M8B3333C16 16GB
Corsair CMK128GX4M8B3333C16 16GB
内存RAM
Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
G Skill Intl F4-3200C16-16GVKA 16GB
G Skill Intl F4-3200C16-16GVKA 16GB
内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
Kingston XCCT36-MIE 16GB
Kingston XCCT36-MIE 16GB
内存RAM
Corsair CMSX4GX3M1A1600C9 4GB
Corsair CMSX4GX3M1A1600C9 4GB
Panram International Corporation PUD43000C164G2NJK 4GB
Panram International Corporation PUD43000C164G2NJK 4GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Crucial Technology BL8G32C16U4RL.M8FE 8GB
Crucial Technology BL8G32C16U4RL.M8FE 8GB
内存RAM
Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
Kingston KHYXPX-MIE 8GB
Kingston KHYXPX-MIE 8GB
内存RAM
Kingston 9905471-006.A00LF 4GB
Kingston 9905471-006.A00LF 4GB
Corsair CMK32GX4M4A2666C16 8GB
Corsair CMK32GX4M4A2666C16 8GB
内存RAM
Kingmax Semiconductor GZOH23F-18---------- 16GB
Kingmax Semiconductor GZOH23F-18---------- 16GB
G Skill Intl F4-2133C15-16GFT 16GB
G Skill Intl F4-2133C15-16GFT 16GB
内存RAM