Samsung M3 93T5750CZA-CE6 2GB vs Kingston 9965600-027.A01G 16GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

Kingston 9965600-027.A01G 16GB

Kingston 9965600-027.A01G 16GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 10.8

测试中的平均数值

Kingston 9965600-027.A01G 16GB

需要考虑的原因
Kingston 9965600-027.A01G 16GB

报告一个错误

低于PassMark测试中的延时，ns

34 77

左右 -126% 更低的延时
更快的写入速度，GB/s

8.5 2,622.0

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

Kingston 9965600-027.A01G 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 34
读取速度，GB/s

3,405.2 10.8
写入速度，GB/s

2,622.0 8.5
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

763 2364

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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最新比较

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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Team Group Inc. Team-Elite-2133 4GB

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SK Hynix HMT41GU7BFR8C-RD 8GB

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

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G Skill Intl F4-2400C14-16GRK 16GB

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Ramaxel Technology RMT3160ED58E9W1600 4GB

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Wilk Elektronik S.A. GX2426D464S/8GSBS2 8GB

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Micron Technology 8ATF1G64AZ-2G3H1 8GB

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G Skill Intl F5-6400J3239G16G 16GB

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Samsung M378A5244CB0-CVF 4GB

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Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Kingston 9965516-481.A00LF 16GB

Kingston 9965516-481.A00LF 16GB

Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

A-DATA Technology AD73I1C1674EV 4GB

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Crucial Technology CT8G4DFD8213.C16FADP 8GB

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Kingston 99U5474-038.A00LF 4GB

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Kingston 9905599-025.A00G 8GB

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Corsair CMSX4GX3M1A1600C9 4GB

Corsair CMSX4GX3M1A1600C9 4GB

Kingston 9905678-024.A00G 4GB

Kingston 9905678-024.A00G 4GB