Samsung M3 93T5750CZA-CE6 2GB vs Kingston 99U5700-032.A00G 16GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

Kingston 99U5700-032.A00G 16GB

Kingston 99U5700-032.A00G 16GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 14.1

测试中的平均数值
更快的写入速度，GB/s

2,622.0 10.6

测试中的平均数值

Kingston 99U5700-032.A00G 16GB

需要考虑的原因
Kingston 99U5700-032.A00G 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 77

左右 -141% 更低的延时
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

Kingston 99U5700-032.A00G 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 32
读取速度，GB/s

3,405.2 14.1
写入速度，GB/s

2,622.0 10.6
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

763 2769

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMK32GX4M4B3200C14 8GB

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Kingston 99U5474-010.A00LF 2GB

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Samsung M3 78T2863EHS-CF7 1GB

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Micron Technology 9ASF1G72PZ-2G3A1 8GB

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Kingston K531R8-MIN 4GB

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Corsair CMWX8GD3000C16W4D 8GB

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SK Hynix HMT325S6BFR8C-H9 2GB

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Golden Empire CL18-20-20 D4-3600 8GB

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Crucial Technology CT51264BA1339.C16F 4GB

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AMD AE34G2139U2 4GB

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Dust Leopard DDR4-2400 CL17 8GB 8GB

Dust Leopard DDR4-2400 CL17 8GB 8GB

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SK Hynix HMA451U6AFR8N-TF 4GB

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Samsung M393B1K70CH0-CH9 8GB

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Crucial Technology CT16G4SFD824A.C16FDD 16GB

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

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Apacer Technology 78.C2GFL.C720B 8GB

Apacer Technology 78.C2GFL.C720B 8GB