Samsung M3 93T5750CZA-CE6 2GB vs Kingston HX421C14FB/4 4GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

Kingston HX421C14FB/4 4GB

Kingston HX421C14FB/4 4GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 16.8

测试中的平均数值
更快的写入速度，GB/s

2,622.0 12.2

测试中的平均数值

Kingston HX421C14FB/4 4GB

需要考虑的原因
Kingston HX421C14FB/4 4GB

报告一个错误

低于PassMark测试中的延时，ns

30 77

左右 -157% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

Kingston HX421C14FB/4 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 30
读取速度，GB/s

3,405.2 16.8
写入速度，GB/s

2,622.0 12.2
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

763 2730

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 8ATF51264AZ-2G1AY 4GB

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Ramos Technology EWB8GB681CA3-16IC 8GB

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Mushkin 99[2/7/4]190F 4GB

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Ramaxel Technology RMN1740HC48D8F667A 2GB

Ramaxel Technology RMN1740HC48D8F667A 2GB

Crucial Technology CT4G4DFS8266.M8FG 4GB

Crucial Technology CT4G4DFS8266.M8FG 4GB