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Samsung M3 93T5750CZA-CE6 2GB
Kingston KHX2400C12D4/16GX 16GB

Samsung M3 93T5750CZA-CE6 2GB vs Kingston KHX2400C12D4/16GX 16GB

总分
star star star star star
Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分
star star star star star
Kingston KHX2400C12D4/16GX 16GB

Kingston KHX2400C12D4/16GX 16GB

差异 规格 评论

差异

Samsung M3 93T5750CZA-CE6 2GB 需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 16.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,622.0 left arrow 13.2
    测试中的平均数值
Kingston KHX2400C12D4/16GX 16GB 需要考虑的原因
Kingston KHX2400C12D4/16GX 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 77
    左右 -166% 更低的延时
  • 更高的内存带宽，mbps
    19200 left arrow 5300
    左右 3.62 更高的带宽

规格

完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
Kingston KHX2400C12D4/16GX 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 29
  • 读取速度，GB/s
    3,405.2 left arrow 16.7
  • 写入速度，GB/s
    2,622.0 left arrow 13.2
  • 内存带宽，mbps
    5300 left arrow 19200
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    763 left arrow 3348

Samsung M3 93T5750CZA-CE6 2GB RAM的比较

takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB

Kingston KHX2400C12D4/16GX 16GB RAM的比较

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Samsung M3 93T5750CZA-CE6 2GB
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Mushkin MR[ABC]4U360JNNM8G 8GB
Mushkin MR[ABC]4U360JNNM8G 8GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
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Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
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Kingston HP26D4U9S8ME-8 8GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
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Samsung M47472K43DB1-CTD 16GB
内存RAM
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内存RAM
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Crucial Technology CT8G4DFS824A.M8FH3 8GB
内存RAM
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内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
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内存RAM
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Micron Technology 18HTF12872AY-800F1 1GB
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Crucial Technology CT16G4DFD824A.M16FD 16GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
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Crucial Technology CT8G4DFS8266.C8FJ 8GB
内存RAM
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Samsung 1600 CL10 Series 8GB
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内存RAM
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Corsair CMX4GX3M2A1600C9 2GB
A-DATA Technology AO1P26KC8T1-BXFSHC 8GB
A-DATA Technology AO1P26KC8T1-BXFSHC 8GB
内存RAM