Samsung M3 93T5750CZA-CE6 2GB vs Micron Technology 16A6A2G64HZ-2-2E1 16GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

Micron Technology 16A6A2G64HZ-2-2E1 16GB

Micron Technology 16A6A2G64HZ-2-2E1 16GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 17

测试中的平均数值

Micron Technology 16A6A2G64HZ-2-2E1 16GB

需要考虑的原因
Micron Technology 16A6A2G64HZ-2-2E1 16GB

报告一个错误

低于PassMark测试中的延时，ns

22 77

左右 -250% 更低的延时
更快的写入速度，GB/s

8.9 2,622.0

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

Micron Technology 16A6A2G64HZ-2-2E1 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 22
读取速度，GB/s

3,405.2 17.0
写入速度，GB/s

2,622.0 8.9
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

763 2623

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Absolute Latency

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Corsair CMK32GX4M1A2666C16 32GB

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A-DATA Technology DDR4 2666 8GB

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Crucial Technology BLS8G4D26BFSB.16FE 8GB

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Corsair CMX8GX3M2A2000C9 4GB

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Kingston 9905663-007.A00G 16GB

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Apacer Technology AQD-D4U8GN24-SE 8GB

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Corsair CMD16GX4M4B3300C16 4GB

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Samsung M391B5673EH1-CH9 2GB

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Corsair CMT32GX4M4K3600C16 8GB

Corsair CMT32GX4M4K3600C16 8GB

Kingston KP4T2F-PSB 4GB

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G Skill Intl F4-3200C16-8GVK 8GB

G Skill Intl F4-3200C16-8GVK 8GB

G Skill Intl F3-12800CL7-4GBXM 4GB

G Skill Intl F3-12800CL7-4GBXM 4GB

G Skill Intl F4-3200C16-8GTZSW 8GB

G Skill Intl F4-3200C16-8GTZSW 8GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

Samsung M471A2K43DB1-CWE 16GB

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Kingston KN2M64-ETB 8GB

Kingston KN2M64-ETB 8GB

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G Skill Intl F4-2666C15-4GVR 4GB

G Skill Intl F4-2666C15-4GVR 4GB