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Samsung M3 93T5750CZA-CE6 2GB
Micron Technology 16ATF2G64HZ-2G3A1 16GB
比较
Samsung M3 93T5750CZA-CE6 2GB vs Micron Technology 16ATF2G64HZ-2G3A1 16GB
总分
Samsung M3 93T5750CZA-CE6 2GB
总分
Micron Technology 16ATF2G64HZ-2G3A1 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
更快的读取速度,GB/s
3
11.5
测试中的平均数值
需要考虑的原因
Micron Technology 16ATF2G64HZ-2G3A1 16GB
报告一个错误
低于PassMark测试中的延时,ns
39
77
左右 -97% 更低的延时
更快的写入速度,GB/s
9.1
2,622.0
测试中的平均数值
更高的内存带宽,mbps
19200
5300
左右 3.62 更高的带宽
规格
完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
Micron Technology 16ATF2G64HZ-2G3A1 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
77
39
读取速度,GB/s
3,405.2
11.5
写入速度,GB/s
2,622.0
9.1
内存带宽,mbps
5300
19200
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
763
1881
Samsung M3 93T5750CZA-CE6 2GB RAM的比较
takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB
Micron Technology 16ATF2G64HZ-2G3A1 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M3 93T5750CZA-CE6 2GB
Micron Technology 16ATF2G64HZ-2G3A1 16GB
A-DATA Technology DOVF1B163G2G 2GB
Corsair CM4X4GF2666Z16K4 4GB
Samsung M4 70T2864QZ3-CF7 1GB
Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Apacer Technology 76.D305G.D390B 16GB
Samsung M471B5173BH0-CK0 4GB
Samsung M471B5273CH0-CF8 4GB
Corsair CMY8GX3M2A2133C8 4GB
Corsair CMW128GX4M8X3600C18 16GB
Kingston 99U5584-001.A00LF 4GB
Apacer Technology 78.B1GS6.AUC0B 4GB
Samsung M471B5273EB0-CK0 4GB
Corsair CM4B8G2J2666A15D 8GB
PNY Electronics PNY 2GB
Kingston 9905700-013.A00G 8GB
Kingston KHX318C10FR/8G 8GB
Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB
G Skill Intl F3-1333C9-4GIS 4GB
Corsair CMSX32GX4M2A2666C18 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3000C16-8GVRB 8GB
Samsung M471B1G73QH0-YK0 8GB
Kingston KMKYF9-HYA 8GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Crucial Technology CT8G4DFS8266.M8FE 8GB
报告一个错误
×
Bug description
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