RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 93T5750CZA-CE6 2GB
Micron Technology 18ASF2G72PDZ-2G6H1R 16GB
比较
Samsung M3 93T5750CZA-CE6 2GB vs Micron Technology 18ASF2G72PDZ-2G6H1R 16GB
总分
Samsung M3 93T5750CZA-CE6 2GB
总分
Micron Technology 18ASF2G72PDZ-2G6H1R 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
更快的读取速度,GB/s
3
10.7
测试中的平均数值
需要考虑的原因
Micron Technology 18ASF2G72PDZ-2G6H1R 16GB
报告一个错误
低于PassMark测试中的延时,ns
49
77
左右 -57% 更低的延时
更快的写入速度,GB/s
8.6
2,622.0
测试中的平均数值
更高的内存带宽,mbps
21300
5300
左右 4.02 更高的带宽
规格
完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
Micron Technology 18ASF2G72PDZ-2G6H1R 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
77
49
读取速度,GB/s
3,405.2
10.7
写入速度,GB/s
2,622.0
8.6
内存带宽,mbps
5300
21300
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
763
2504
Samsung M3 93T5750CZA-CE6 2GB RAM的比较
takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB
Micron Technology 18ASF2G72PDZ-2G6H1R 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
AMD AE34G1601U1 4GB
Kingston KHX2666C15/8G 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Essencore Limited IM44GU48N26-FFFHM 4GB
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Crucial Technology BL16G26C16S4B.16FD 16GB
Neo Forza GKE160SO204808-3200 16GB
A-DATA Technology AD5U48008G-B 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Essencore Limited IM44GU48N26-FFFHM 4GB
SK Hynix HYMP112U64CP8-Y5 1GB
G Skill Intl F4-4000C17-8GVKB 8GB
Kingston KHX1600C9S3L/4G 4GB
Kingston MSISID4S9S8ME-8 8GB
Hexon Technology Pte Ltd HEXON 1GB
Essencore Limited KD4AGU880-36A180C 16GB
A-DATA Technology DDR3 1866 2OZ 4GB
Netac Technology Co Ltd E40832A 8GB
Crucial Technology CT25664AA800.M16FG 2GB
Corsair CM4X8GE2666C16K8 8GB
A-DATA Technology DOVF1B163G2G 2GB
Essencore Limited IM48GU48N24-FFFHM 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N
Samsung 1600 CL10 Series 8GB
Crucial Technology CT16G4SFD832A.M16FJ 16GB
Samsung M3 78T2863EHS-CF7 1GB
Samsung M471A1K43CB1-CRC 8GB
报告一个错误
×
Bug description
Source link