Samsung M3 93T5750CZA-CE6 2GB vs Micron Technology 36ASF2G72PZ-2G1B1 16GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

Micron Technology 36ASF2G72PZ-2G1B1 16GB

Micron Technology 36ASF2G72PZ-2G1B1 16GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

Micron Technology 36ASF2G72PZ-2G1B1 16GB

需要考虑的原因
Micron Technology 36ASF2G72PZ-2G1B1 16GB

报告一个错误

低于PassMark测试中的延时，ns

51 77

左右 -51% 更低的延时
更快的读取速度，GB/s

9.9 3

测试中的平均数值
更快的写入速度，GB/s

8.1 2,622.0

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

Micron Technology 36ASF2G72PZ-2G1B1 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 51
读取速度，GB/s

3,405.2 9.9
写入速度，GB/s

2,622.0 8.1
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

763 2314

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

G Skill Intl F5-6000J3636F16G 16GB

G Skill Intl F5-6000J3636F16G 16GB

Kingston KF556C40-16 16GB

Kingston KF556C40-16 16GB

Crucial Technology BLS8G3N169ES4.16FE 8GB

Crucial Technology BLS8G3N169ES4.16FE 8GB

Kingston 9905744-062.A00G 32GB

Kingston 9905744-062.A00G 32GB

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

G Skill Intl F4-3200C14-8GTZSW 8GB

G Skill Intl F4-3200C14-8GTZSW 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

SK Hynix HMA81GU6DJR8N-XN 8GB

SK Hynix HMA81GU6DJR8N-XN 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Kingston 9905678-033.A00G 4GB

Kingston 9905678-033.A00G 4GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

V-Color Technology Inc. TL8G36818D-E6PRSWK 8GB

V-Color Technology Inc. TL8G36818D-E6PRSWK 8GB

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

Crucial Technology CT16G4DFD8213.C16FBD 16GB

Crucial Technology CT16G4DFD8213.C16FBD 16GB

Micron Technology 8KTF25664HZ-1G4M1 2GB

Micron Technology 8KTF25664HZ-1G4M1 2GB

SK Hynix HMA82GS7AFR8N-UH 16GB

SK Hynix HMA82GS7AFR8N-UH 16GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

Kingston 9965604-008.D00G 16GB

Kingston 9965604-008.D00G 16GB

Crucial Technology BLT4G3D1337DT1TX0. 4GB

Crucial Technology BLT4G3D1337DT1TX0. 4GB

Kingston 99U5471-017.A00LF 4GB

Kingston 99U5471-017.A00LF 4GB

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

Micron Technology 18ASF1G72PDZ-2G1B1 8GB

Micron Technology 18ASF1G72PDZ-2G1B1 8GB

Corsair CML8GX3M2A1866C9 4GB

Corsair CML8GX3M2A1866C9 4GB

Samsung M471A1K43DB1-CWE 8GB

Samsung M471A1K43DB1-CWE 8GB

Kingston 9905471-006.A01LF 4GB

Kingston 9905471-006.A01LF 4GB

Crucial Technology BLS16G4S26BFSD.16FBD 16GB

Crucial Technology BLS16G4S26BFSD.16FBD 16GB