Samsung M3 93T5750CZA-CE6 2GB vs Micron Technology 36ASF2G72PZ-2G3B1 16GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

Micron Technology 36ASF2G72PZ-2G3B1 16GB

Micron Technology 36ASF2G72PZ-2G3B1 16GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 10.4

测试中的平均数值

Micron Technology 36ASF2G72PZ-2G3B1 16GB

需要考虑的原因
Micron Technology 36ASF2G72PZ-2G3B1 16GB

报告一个错误

低于PassMark测试中的延时，ns

51 77

左右 -51% 更低的延时
更快的写入速度，GB/s

7.9 2,622.0

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

Micron Technology 36ASF2G72PZ-2G3B1 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 51
读取速度，GB/s

3,405.2 10.4
写入速度，GB/s

2,622.0 7.9
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

763 2387

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLS8G4D240FSB.M16FBD 8GB

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Kreton Corporation 51624xxxx68x35xxxx 2GB

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Chun Well Technology Holding Limited D4U0836144B 8GB

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Kingston ACR16D3LS1KNG/4G 4GB

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Micron Technology 16ATF2G64AZ-2G3B1 16GB

Micron Technology 16ATF2G64AZ-2G3B1 16GB

Team Group Inc. Team-Elite-1333 4GB

Team Group Inc. Team-Elite-1333 4GB

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Hyundai Inc GP-GR26C16S8K1HU408 8GB

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Crucial Technology BLS8G4D240FSEK.8FBR 8GB

Crucial Technology BLS8G4D240FSEK.8FBR 8GB