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Samsung M3 93T5750CZA-CE6 2GB
Micron Technology 4ATF51264HZ-2G6E3 4GB
比较
Samsung M3 93T5750CZA-CE6 2GB vs Micron Technology 4ATF51264HZ-2G6E3 4GB
总分
Samsung M3 93T5750CZA-CE6 2GB
总分
Micron Technology 4ATF51264HZ-2G6E3 4GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
更快的读取速度,GB/s
3
16.6
测试中的平均数值
更快的写入速度,GB/s
2,622.0
12.5
测试中的平均数值
需要考虑的原因
Micron Technology 4ATF51264HZ-2G6E3 4GB
报告一个错误
低于PassMark测试中的延时,ns
31
77
左右 -148% 更低的延时
更高的内存带宽,mbps
21300
5300
左右 4.02 更高的带宽
规格
完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
Micron Technology 4ATF51264HZ-2G6E3 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
77
31
读取速度,GB/s
3,405.2
16.6
写入速度,GB/s
2,622.0
12.5
内存带宽,mbps
5300
21300
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
763
2605
Samsung M3 93T5750CZA-CE6 2GB RAM的比较
takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB
Micron Technology 4ATF51264HZ-2G6E3 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M3 93T5750CZA-CE6 2GB
SK Hynix HMA82GU6DJR8N-WM 16GB
A-DATA Technology ADOVE1A0834E 1GB
AMD R7416G2400U2S 16GB
A-DATA Technology VDQVE1B16 2GB
SK Hynix HMA84GL7MMR4N-TF 32GB
Samsung M378B5273DH0-CH9 4GB
Corsair CMT64GX4M4K3600C16 16GB
AMD R538G1601U2S-UO 8GB
Corsair CMW32GX4M2D3600C18 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BLS8G4D240FSA.16FAR 8GB
SK Hynix HMT31GR7CFR4C-PB 8GB
G Skill Intl F4-2666C15-4GVK 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
G Skill Intl F4-3600C16-16GTZR 16GB
Nanya Technology NT4GC64C88B1NS-DI 4GB
G Skill Intl F4-2400C15-8GFT 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 4ATF51264HZ-2G6E1 4GB
A-DATA Technology DDR3 1866 2OZ 4GB
Mushkin MES4S213FF16G28 16GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Patriot Memory (PDP Systems) 4000 C16 Series 8GB
Ramaxel Technology RMT3010EC58E8F1333 2GB
Corsair CMU16GX4M2A2666C16 8GB
G Skill Intl F3-2400C11-8GSR 8GB
Kingston LV32D4S2S8HD-8 8GB
报告一个错误
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