RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung M3 93T5750CZA-CE6 2GB
Micron Technology 4ATF51264HZ-2G6E3 4GB

Samsung M3 93T5750CZA-CE6 2GB vs Micron Technology 4ATF51264HZ-2G6E3 4GB

总分
star star star star star
Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分
star star star star star
Micron Technology 4ATF51264HZ-2G6E3 4GB

Micron Technology 4ATF51264HZ-2G6E3 4GB

差异 规格 评论

差异

Samsung M3 93T5750CZA-CE6 2GB 需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 16.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,622.0 left arrow 12.5
    测试中的平均数值
Micron Technology 4ATF51264HZ-2G6E3 4GB 需要考虑的原因
Micron Technology 4ATF51264HZ-2G6E3 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 77
    左右 -148% 更低的延时
  • 更高的内存带宽，mbps
    21300 left arrow 5300
    左右 4.02 更高的带宽

规格

完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
Micron Technology 4ATF51264HZ-2G6E3 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 31
  • 读取速度，GB/s
    3,405.2 left arrow 16.6
  • 写入速度，GB/s
    2,622.0 left arrow 12.5
  • 内存带宽，mbps
    5300 left arrow 21300
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    763 left arrow 2605

Samsung M3 93T5750CZA-CE6 2GB RAM的比较

takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB

Micron Technology 4ATF51264HZ-2G6E3 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Corsair CMK8GX4M2B3600C18 4GB
Corsair CMK8GX4M2B3600C18 4GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Micron Technology 4ATF51264HZ-2G6E3 4GB
Micron Technology 4ATF51264HZ-2G6E3 4GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Kingston KHX2400C14/16G 16GB
Kingston KHX2400C14/16G 16GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
Team Group Inc. TEAMGROUP-UD4-4000 4GB
Team Group Inc. TEAMGROUP-UD4-4000 4GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Wilk Elektronik S.A. GY2133D464L15S/4G 4GB
Wilk Elektronik S.A. GY2133D464L15S/4G 4GB
内存RAM
Kingston 9965433-034.A00LF 4GB
Kingston 9965433-034.A00LF 4GB
Corsair CMK32GX4M4A2400C16 8GB
Corsair CMK32GX4M4A2400C16 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Kingston 9905665-009.A00G 4GB
Kingston 9905665-009.A00G 4GB
内存RAM
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT25664BA160B.C16F 2GB
Kingston KF3000C16D4/32GX 32GB
Kingston KF3000C16D4/32GX 32GB
内存RAM
Kingston 99U5595-005.A00LF 2GB
Kingston 99U5595-005.A00LF 2GB
Kingston 9905665-020.A00G 4GB
Kingston 9905665-020.A00G 4GB
内存RAM
Kingston 99U5595-005.A00LF 2GB
Kingston 99U5595-005.A00LF 2GB
Panram International Corporation PUD43000C168G2NJR 8GB
Panram International Corporation PUD43000C168G2NJR 8GB
内存RAM
Kingston 99U5474-028.A00LF 4GB
Kingston 99U5474-028.A00LF 4GB
Corsair CMK32GX4M2D3600C16 16GB
Corsair CMK32GX4M2D3600C16 16GB
内存RAM
Qimonda 72T128420EFA3SB2 1GB
Qimonda 72T128420EFA3SB2 1GB
Corsair CMW128GX4M8X3600C18 16GB
Corsair CMW128GX4M8X3600C18 16GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Kllisre 0000 8GB
Kllisre 0000 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology AM2P24HC8T1-BUSS 8GB
A-DATA Technology AM2P24HC8T1-BUSS 8GB
内存RAM