RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M3 93T5750CZA-CE6 2GB
Micron Technology V-GeN D4V16GL24A8R 16GB
比较
Samsung M3 93T5750CZA-CE6 2GB vs Micron Technology V-GeN D4V16GL24A8R 16GB
总分
Samsung M3 93T5750CZA-CE6 2GB
总分
Micron Technology V-GeN D4V16GL24A8R 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
更快的读取速度,GB/s
3
16.9
测试中的平均数值
需要考虑的原因
Micron Technology V-GeN D4V16GL24A8R 16GB
报告一个错误
低于PassMark测试中的延时,ns
68
77
左右 -13% 更低的延时
更快的写入速度,GB/s
8.9
2,622.0
测试中的平均数值
更高的内存带宽,mbps
19200
5300
左右 3.62 更高的带宽
规格
完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
Micron Technology V-GeN D4V16GL24A8R 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
77
68
读取速度,GB/s
3,405.2
16.9
写入速度,GB/s
2,622.0
8.9
内存带宽,mbps
5300
19200
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
763
2007
Samsung M3 93T5750CZA-CE6 2GB RAM的比较
takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB
Micron Technology V-GeN D4V16GL24A8R 16GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung DDR3 8GB 1600MHz 8GB
Wilk Elektronik S.A. IR2400D464L17S/4G 4GB
Kingston 9905417-061.A00G 4GB
Kingston 9905711-032.A00G 8GB
Crucial Technology CT51264BA1339.C16F 4GB
Gold Key Technology Co Ltd NMUD480E82-3200E 8GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 36ASF4G72PZ-2G6D1 32GB
Samsung M393B1G70QH0-YK0 8GB
Corsair CMK16GX4M2A2666C18 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston X2YH1K-MIE-NX 16GB
Kingston 9905471-076.A00LF 8GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
Kingston 99U5474-037.A00LF 4GB
Micron Technology 8R8F1G64HZ-2G3B1 8GB
Kingston 9905403-134.A00LF 2GB
Kingston KHYXPX-HYJ 8GB
Elpida EBJ10UE8BDF0-DJ-F 1GB
Samsung M378B2873FH0-CH9 1GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Wilk Elektronik S.A. GR3200D464L22/16G 16GB
Corsair CMX4GX3M2A1600C9 2GB
Crucial Technology CT8G4SFS6266.M4FB 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Corsair CMR16GX4M2C3200C16 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Samsung M471A1K43BB0-CPB 8GB
报告一个错误
×
Bug description
Source link