Samsung M3 93T5750CZA-CE6 2GB vs Mushkin MR[ABC]4U320GJJM32G 32GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

Mushkin MR[ABC]4U320GJJM32G 32GB

Mushkin MR[ABC]4U320GJJM32G 32GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 20.1

测试中的平均数值
更快的写入速度，GB/s

2,622.0 16.6

测试中的平均数值

Mushkin MR[ABC]4U320GJJM32G 32GB

需要考虑的原因
Mushkin MR[ABC]4U320GJJM32G 32GB

报告一个错误

低于PassMark测试中的延时，ns

28 77

左右 -175% 更低的延时
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

Mushkin MR[ABC]4U320GJJM32G 32GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 28
读取速度，GB/s

3,405.2 20.1
写入速度，GB/s

2,622.0 16.6
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

763 3990

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMA84GL7AMR4N-UH 32GB

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Golden Empire CL15-17-17 D4-3200 8GB

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Asgard VMA45UG-MEC1U2AW1 8GB

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Corsair CMK32GX4M4K3600C16 8GB

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Kingston 9905403-090.A01LF 4GB

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Crucial Technology CT16G4DFD824A.C16FDD 16GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

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G Skill Intl F4-3600C16-8GTZKK 8GB

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Kingston 99U5584-004.A00LF 4GB

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Micron Technology 8ATF1G64AZ-2G6H1 8GB

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G Skill Intl F4-2400C16-8GFX 8GB

G Skill Intl F4-2400C16-8GFX 8GB