Samsung M3 93T5750CZA-CE6 2GB vs Samsung M393A4K40CB2-CTD 32GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

Samsung M393A4K40CB2-CTD 32GB

Samsung M393A4K40CB2-CTD 32GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

Samsung M393A4K40CB2-CTD 32GB

需要考虑的原因
Samsung M393A4K40CB2-CTD 32GB

报告一个错误

低于PassMark测试中的延时，ns

59 77

左右 -31% 更低的延时
更快的读取速度，GB/s

9.1 3

测试中的平均数值
更快的写入速度，GB/s

7.2 2,622.0

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

Samsung M393A4K40CB2-CTD 32GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 59
读取速度，GB/s

3,405.2 9.1
写入速度，GB/s

2,622.0 7.2
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

763 2025

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMT42GR7AFR4A-PB 16GB

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INTENSO M418039 8GB

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Crucial Technology BL16G36C16U4W.M8FB1 16GB

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SK Hynix HMA84GR7MFR4N-UH 32GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Kingston KC5N22-MIE 16GB

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Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

Crucial Technology BLS16G4D26BFSC.16FBD 16GB

Crucial Technology BLS16G4D26BFSC.16FBD 16GB

SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

Kingston 9905624-046.A00G 8GB

Kingston 9905624-046.A00G 8GB