Samsung M3 93T5750CZA-CE6 2GB vs Samsung M471A5244CB0-CTD 4GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

Samsung M471A5244CB0-CTD 4GB

Samsung M471A5244CB0-CTD 4GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 15.5

测试中的平均数值
更快的写入速度，GB/s

2,622.0 11.5

测试中的平均数值

Samsung M471A5244CB0-CTD 4GB

需要考虑的原因
Samsung M471A5244CB0-CTD 4GB

报告一个错误

低于PassMark测试中的延时，ns

39 77

左右 -97% 更低的延时
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

Samsung M471A5244CB0-CTD 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 39
读取速度，GB/s

3,405.2 15.5
写入速度，GB/s

2,622.0 11.5
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

763 2264

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Elpida EBJ17RG4EFWA-DJ-F 16GB

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Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB

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Samsung M3 78T3354BZ0-CCC 256MB

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Crucial Technology BL16G30C15U4W.M16FE1 16GB

Crucial Technology BL16G30C15U4W.M16FE1 16GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

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Kingston ACR24D4S7S8MB-8 8GB

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Essencore Limited KD48GU88C-26N1600 8GB

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G Skill Intl F4-3200C15-16GTZKY 16GB

G Skill Intl F4-3200C15-16GTZKY 16GB

Corsair CMSX4GX3M1A1600C9 4GB

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Kingston K6VDX7-HYD 8GB

Kingston K6VDX7-HYD 8GB