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Samsung M3 93T5750CZA-CE6 2GB
Smart Modular SF4642G8CK8I8HLSBG 16GB

Samsung M3 93T5750CZA-CE6 2GB vs Smart Modular SF4642G8CK8I8HLSBG 16GB

总分
star star star star star
Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分
star star star star star
Smart Modular SF4642G8CK8I8HLSBG 16GB

Smart Modular SF4642G8CK8I8HLSBG 16GB

差异 规格 评论

差异

Samsung M3 93T5750CZA-CE6 2GB 需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 18.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,622.0 left arrow 14.9
    测试中的平均数值
Smart Modular SF4642G8CK8I8HLSBG 16GB 需要考虑的原因
Smart Modular SF4642G8CK8I8HLSBG 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 77
    左右 -235% 更低的延时
  • 更高的内存带宽，mbps
    21300 left arrow 5300
    左右 4.02 更高的带宽

规格

完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
Smart Modular SF4642G8CK8I8HLSBG 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 23
  • 读取速度，GB/s
    3,405.2 left arrow 18.4
  • 写入速度，GB/s
    2,622.0 left arrow 14.9
  • 内存带宽，mbps
    5300 left arrow 21300
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    763 left arrow 3456

Samsung M3 93T5750CZA-CE6 2GB RAM的比较

takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB

Smart Modular SF4642G8CK8I8HLSBG 16GB RAM的比较

Kingston 9905403-444.A00LF 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Smart Modular SF4642G8CK8I8HLSBG 16GB
Smart Modular SF4642G8CK8I8HLSBG 16GB
内存RAM
Mushkin 996902 2GB
Mushkin 996902 2GB
Panram International Corporation M424051 4GB
Panram International Corporation M424051 4GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
SK Hynix GKE800UD102408-2133 8GB
SK Hynix GKE800UD102408-2133 8GB
内存RAM
SK Hynix HMT425S6CFR6A-PB 2GB
SK Hynix HMT425S6CFR6A-PB 2GB
Wilk Elektronik S.A. GX2133D464L15S/8G 8GB
Wilk Elektronik S.A. GX2133D464L15S/8G 8GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Micron Technology 8ATF1G64AZ-2G6D1 8GB
Micron Technology 8ATF1G64AZ-2G6D1 8GB
内存RAM
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Essencore Limited KD48GU880-36A180U 8GB
Essencore Limited KD48GU880-36A180U 8GB
内存RAM
Elpida EBJ17RG4EFWA-DJ-F 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Crucial Technology BLM16G40C18U4BL.M8FB 16GB
Crucial Technology BLM16G40C18U4BL.M8FB 16GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Micron Technology 36ASF4G72PZ-2G6H1 32GB
Micron Technology 36ASF4G72PZ-2G6H1 32GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Apacer Technology 76.D105G.D090B 16GB
Apacer Technology 76.D105G.D090B 16GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Micron Technology 16ATF4G64HZ-3G2E2 32GB
Micron Technology 16ATF4G64HZ-3G2E2 32GB
内存RAM
Nanya Technology NT512T64U88B0BY-3C 512MB
Nanya Technology NT512T64U88B0BY-3C 512MB
Corsair CMR64GX4M4C3200C16 16GB
Corsair CMR64GX4M4C3200C16 16GB
内存RAM
Samsung M471B5173BH0-YK0 4GB
Samsung M471B5173BH0-YK0 4GB
Crucial Technology BLE16G4D32AEEA.K16FB 16GB
Crucial Technology BLE16G4D32AEEA.K16FB 16GB
内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
Micron Technology TEAMGROUP-UD4-2133 16GB
Micron Technology TEAMGROUP-UD4-2133 16GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Gloway International (HK) STKD4GAM2400-F 8GB
Gloway International (HK) STKD4GAM2400-F 8GB
内存RAM