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Samsung M3 93T5750CZA-CE6 2GB
Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB
比较
Samsung M3 93T5750CZA-CE6 2GB vs Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB
总分
Samsung M3 93T5750CZA-CE6 2GB
总分
Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
更快的读取速度,GB/s
3
20.2
测试中的平均数值
更快的写入速度,GB/s
2,622.0
18.1
测试中的平均数值
需要考虑的原因
Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB
报告一个错误
低于PassMark测试中的延时,ns
25
77
左右 -208% 更低的延时
更高的内存带宽,mbps
21300
5300
左右 4.02 更高的带宽
规格
完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
77
25
读取速度,GB/s
3,405.2
20.2
写入速度,GB/s
2,622.0
18.1
内存带宽,mbps
5300
21300
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
763
4046
Samsung M3 93T5750CZA-CE6 2GB RAM的比较
takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB
Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
PNY Electronics PNY 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Ramos Technology EWB8GB681CA3-16IC 8GB
Crucial Technology BL32G32C16S4B.16FB 32GB
A-DATA Technology AD73I1B1672EG 2GB
SK Hynix HMAA4GS6CJR8N-XN 32GB
Kingston KVR16N11/8-SP 8GB
Team Group Inc. DDR4 2666 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Apacer Technology GD2.1831WS.001 16GB
Samsung 1600 CL10 Series 8GB
Wilk Elektronik S.A. W-HK26S16G 16GB
Samsung M393B1G70BH0-CK0 8GB
Kingston 99U5665-004.A00G 4GB
G Skill Intl F3-1866C8-8GTX 8GB
Micron Technology 18ASF1G72PDZ-2G1A1 8GB
Samsung M393B1G70QH0-YK0 8GB
Corsair CM4S16GL3200K18K2 16GB
Kingston KP4T2F-PSB 4GB
Samsung M386A8K40CM2-CRC 64GB
SK Hynix HMT325U6CFR8C-PB 2GB
G Skill Intl F4-3200C16-4GRK 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
G Skill Intl F4-2933C16-8GFX 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Smart Modular SG564568FG8N6KF-Z2 2GB
Transcend Information TS1GSH64V1H 8GB
Crucial Technology CT25664AA800.M16FM 2GB
Kingston ACR26D4U9D8ME-16 16GB
报告一个错误
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Bug description
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