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Samsung M3 93T5750CZA-CE6 2GB
Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB

Samsung M3 93T5750CZA-CE6 2GB vs Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB

总分
star star star star star
Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分
star star star star star
Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB

Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB

差异 规格 评论

差异

Samsung M3 93T5750CZA-CE6 2GB 需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 18.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,622.0 left arrow 15.9
    测试中的平均数值
Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB 需要考虑的原因
Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 77
    左右 -166% 更低的延时
  • 更高的内存带宽，mbps
    21300 left arrow 5300
    左右 4.02 更高的带宽

规格

完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 29
  • 读取速度，GB/s
    3,405.2 left arrow 18.2
  • 写入速度，GB/s
    2,622.0 left arrow 15.9
  • 内存带宽，mbps
    5300 left arrow 21300
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    763 left arrow 3866

Samsung M3 93T5750CZA-CE6 2GB RAM的比较

takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB

Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB RAM的比较

SK Hynix HYMP31GF72CMP4D5Y5 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB
Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB
内存RAM
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
Kingston 9905663-021.A00G 16GB
Kingston 9905663-021.A00G 16GB
内存RAM
Ramaxel Technology RMT3160ED58E9W1600 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Micron Technology 16ATF2G64HZ-3G2E1 16GB
Micron Technology 16ATF2G64HZ-3G2E1 16GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F4-3200C14-8GTZSK 8GB
G Skill Intl F4-3200C14-8GTZSK 8GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
SK Hynix HMA851S6CJR6N-XN 4GB
SK Hynix HMA851S6CJR6N-XN 4GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Kingston KF3600C18D4/32GX 32GB
Kingston KF3600C18D4/32GX 32GB
内存RAM
Kingston HP698651-154-MCN 8GB
Kingston HP698651-154-MCN 8GB
Corsair CM4X16GF3200C22S2 16GB
Corsair CM4X16GF3200C22S2 16GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Micron Technology 8ATF1G64AZ-2G6E1 8GB
Micron Technology 8ATF1G64AZ-2G6E1 8GB
内存RAM
SK Hynix HMT351S6CFR8C-PB 4GB
SK Hynix HMT351S6CFR8C-PB 4GB
Wilk Elektronik S.A. IRX2666D464L16/16G 16GB
Wilk Elektronik S.A. IRX2666D464L16/16G 16GB
内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
Crucial Technology BL8G32C16U4WL.8FE 8GB
Crucial Technology BL8G32C16U4WL.8FE 8GB
内存RAM
Crucial Technology BLS8G3N18AES4.16FE 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Kingston KHX3333C17D4/4GX 4GB
Kingston KHX3333C17D4/4GX 4GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Asgard VMA44UG-MEC1U2AW1 8GB
Asgard VMA44UG-MEC1U2AW1 8GB
内存RAM
Kingston 9965662-016.A00G 16GB
Kingston 9965662-016.A00G 16GB
Kingston 99U5702-025.A00G 8GB
Kingston 99U5702-025.A00G 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
A-DATA Technology AO1P32NC8T1-BCIS 8GB
A-DATA Technology AO1P32NC8T1-BCIS 8GB
内存RAM