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Samsung M323R2GA3BB0-CQKOD 16GB
Crucial Technology CT16G48C40U5.M8A1 16GB

Samsung M323R2GA3BB0-CQKOD 16GB vs Crucial Technology CT16G48C40U5.M8A1 16GB

总分
star star star star star
Samsung M323R2GA3BB0-CQKOD 16GB

Samsung M323R2GA3BB0-CQKOD 16GB

总分
star star star star star
Crucial Technology CT16G48C40U5.M8A1 16GB

Crucial Technology CT16G48C40U5.M8A1 16GB

差异 规格 评论

差异

Samsung M323R2GA3BB0-CQKOD 16GB 需要考虑的原因
Samsung M323R2GA3BB0-CQKOD 16GB
报告一个错误
Crucial Technology CT16G48C40U5.M8A1 16GB 需要考虑的原因
Crucial Technology CT16G48C40U5.M8A1 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 25
    左右 -4% 更低的延时
  • 更快的读取速度，GB/s
    14.4 left arrow 13.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.3 left arrow 12.1
    测试中的平均数值

规格

完整的技术规格清单
Samsung M323R2GA3BB0-CQKOD 16GB
Crucial Technology CT16G48C40U5.M8A1 16GB
主要特点
  • 存储器类型
    DDR5 left arrow DDR5
  • PassMark中的延时，ns
    25 left arrow 24
  • 读取速度，GB/s
    13.4 left arrow 14.4
  • 写入速度，GB/s
    12.1 left arrow 12.3
  • 内存带宽，mbps
    19200 left arrow 19200
Other
  • 描述
    PC5-19200, 1.1V, CAS Supported: 22 26 28 30 32 36 40 42 left arrow PC5-19200, 1.1V, CAS Supported: 22 26 28 30 32 36 40 42
  • 时序/时钟速度
    no data / 2400 MHz left arrow no data / 2400 MHz
  • 排名PassMark (越多越好)
    3419 left arrow 3392

Samsung M323R2GA3BB0-CQKOD 16GB RAM的比较

Micron Technology 36ASF2G72PZ-2G1A2 16GB
Corsair CMSX32GX4M2A3200C22 16GB

Crucial Technology CT16G48C40U5.M8A1 16GB RAM的比较

Apacer Technology 76.D105G.D090B 16GB
Crucial Technology CT16G4SFD832A.M16FJ 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Samsung M323R2GA3BB0-CQKOD 16GB
Samsung M323R2GA3BB0-CQKOD 16GB
Crucial Technology CT16G48C40U5.M8A1 16GB
Crucial Technology CT16G48C40U5.M8A1 16GB
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内存RAM
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内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
SK Hynix HMA82GU7MFR8N-TF 16GB
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内存RAM
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内存RAM
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内存RAM
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