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Samsung M323R2GA3BB0-CQKOD 16GB
Crucial Technology CT8G4DFS824A.M8FH3 8GB

Samsung M323R2GA3BB0-CQKOD 16GB vs Crucial Technology CT8G4DFS824A.M8FH3 8GB

总分
star star star star star
Samsung M323R2GA3BB0-CQKOD 16GB

Samsung M323R2GA3BB0-CQKOD 16GB

总分
star star star star star
Crucial Technology CT8G4DFS824A.M8FH3 8GB

Crucial Technology CT8G4DFS824A.M8FH3 8GB

差异 规格 评论

差异

Samsung M323R2GA3BB0-CQKOD 16GB 需要考虑的原因
Samsung M323R2GA3BB0-CQKOD 16GB
报告一个错误
  • 更快的写入速度，GB/s
    12.1 left arrow 8.2
    测试中的平均数值
Crucial Technology CT8G4DFS824A.M8FH3 8GB 需要考虑的原因
Crucial Technology CT8G4DFS824A.M8FH3 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    20 left arrow 25
    左右 -25% 更低的延时
  • 更快的读取速度，GB/s
    17 left arrow 13.4
    测试中的平均数值

规格

完整的技术规格清单
Samsung M323R2GA3BB0-CQKOD 16GB
Crucial Technology CT8G4DFS824A.M8FH3 8GB
主要特点
  • 存储器类型
    DDR5 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 20
  • 读取速度，GB/s
    13.4 left arrow 17.0
  • 写入速度，GB/s
    12.1 left arrow 8.2
  • 内存带宽，mbps
    19200 left arrow 19200
Other
  • 描述
    PC5-19200, 1.1V, CAS Supported: 22 26 28 30 32 36 40 42 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    no data / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    3419 left arrow 2503

Samsung M323R2GA3BB0-CQKOD 16GB RAM的比较

Micron Technology 36ASF2G72PZ-2G1A2 16GB
Corsair CMSX32GX4M2A3200C22 16GB

Crucial Technology CT8G4DFS824A.M8FH3 8GB RAM的比较

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Ramaxel Technology RMUA5120MB86H9F2400 4GB
Ramaxel Technology RMUA5120MB86H9F2400 4GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Corsair CM4X8GF2666Z16K4 8GB
Corsair CM4X8GF2666Z16K4 8GB
内存RAM
Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
Team Group Inc. TEAMGROUP-UD4-3600 8GB
Team Group Inc. TEAMGROUP-UD4-3600 8GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Crucial Technology BLS8G4D32AESEK.M8FE1 8GB
Crucial Technology BLS8G4D32AESEK.M8FE1 8GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
G Skill Intl F4-4000C17-16GTRSB 16GB
G Skill Intl F4-4000C17-16GTRSB 16GB
内存RAM
Crucial Technology CT16G48C40U5.M8A1 16GB
Crucial Technology CT16G48C40U5.M8A1 16GB
Hypertec G2RT-4AFT00 16GB
Hypertec G2RT-4AFT00 16GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Corsair CMV4GX4M1A2666C18 4GB
Corsair CMV4GX4M1A2666C18 4GB
内存RAM
AMD R534G1601U1S-UO 4GB
AMD R534G1601U1S-UO 4GB
Samsung M378A4G43AB2-CVF 32GB
Samsung M378A4G43AB2-CVF 32GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
V-GEN D4H8GL36A8TXV 8GB
V-GEN D4H8GL36A8TXV 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT8G4SFD8213.C16FADP 8GB
Crucial Technology CT8G4SFD8213.C16FADP 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Crucial Technology CT16G4SFRA266.C8FB 16GB
Crucial Technology CT16G4SFRA266.C8FB 16GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Micron Technology 8ATF1G64HZ-3G2R1 8GB
Micron Technology 8ATF1G64HZ-3G2R1 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
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G Skill Intl F4-4400C17-16GVK 16GB
内存RAM
Kingston 9905403-134.A00LF 2GB
Kingston 9905403-134.A00LF 2GB
Gold Key Technology Co Ltd NMUD480E86-3200 8GB
Gold Key Technology Co Ltd NMUD480E86-3200 8GB
内存RAM