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Samsung M323R2GA3BB0-CQKOD 16GB
Gold Key Technology Co Ltd GKE160SO102408-2666 16GB

Samsung M323R2GA3BB0-CQKOD 16GB vs Gold Key Technology Co Ltd GKE160SO102408-2666 16GB

总分
star star star star star
Samsung M323R2GA3BB0-CQKOD 16GB

Samsung M323R2GA3BB0-CQKOD 16GB

总分
star star star star star
Gold Key Technology Co Ltd GKE160SO102408-2666 16GB

Gold Key Technology Co Ltd GKE160SO102408-2666 16GB

差异 规格 评论

差异

Samsung M323R2GA3BB0-CQKOD 16GB 需要考虑的原因
Samsung M323R2GA3BB0-CQKOD 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 39
    左右 36% 更低的延时
  • 更快的写入速度，GB/s
    12.1 left arrow 11.1
    测试中的平均数值
Gold Key Technology Co Ltd GKE160SO102408-2666 16GB 需要考虑的原因
Gold Key Technology Co Ltd GKE160SO102408-2666 16GB
报告一个错误
  • 更快的读取速度，GB/s
    15.7 left arrow 13.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 19200
    左右 1.11 更高的带宽

规格

完整的技术规格清单
Samsung M323R2GA3BB0-CQKOD 16GB
Gold Key Technology Co Ltd GKE160SO102408-2666 16GB
主要特点
  • 存储器类型
    DDR5 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 39
  • 读取速度，GB/s
    13.4 left arrow 15.7
  • 写入速度，GB/s
    12.1 left arrow 11.1
  • 内存带宽，mbps
    19200 left arrow 21300
Other
  • 描述
    PC5-19200, 1.1V, CAS Supported: 22 26 28 30 32 36 40 42 left arrow PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19
  • 时序/时钟速度
    no data / 2400 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    3419 left arrow 2725

Samsung M323R2GA3BB0-CQKOD 16GB RAM的比较

Micron Technology 36ASF2G72PZ-2G1A2 16GB
Corsair CMSX32GX4M2A3200C22 16GB

Gold Key Technology Co Ltd GKE160SO102408-2666 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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G Skill Intl F4-4000C15-8GTZR 8GB
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内存RAM
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Nanya Technology M2Y1G64TU8HB0B-25C 1GB
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G Skill Intl F4-5066C20-8GVK 8GB
内存RAM
A-DATA Technology DDR3 1333G 2GB
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内存RAM
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内存RAM
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