Samsung M378A1G43DB0-CPB 8GB vs A-DATA Technology DDR4 2666 8GB

总分

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

总分

A-DATA Technology DDR4 2666 8GB

A-DATA Technology DDR4 2666 8GB

差异规格评论

差异

Samsung M378A1G43DB0-CPB 8GB

需要考虑的原因
Samsung M378A1G43DB0-CPB 8GB

报告一个错误

A-DATA Technology DDR4 2666 8GB

需要考虑的原因
A-DATA Technology DDR4 2666 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 36

左右 -13% 更低的延时
更快的读取速度，GB/s

15.5 15

测试中的平均数值
更快的写入速度，GB/s

11.8 10.3

测试中的平均数值
更高的内存带宽，mbps

21300 17000

左右 1.25 更高的带宽

规格

完整的技术规格清单

Samsung M378A1G43DB0-CPB 8GB

A-DATA Technology DDR4 2666 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

36 32
读取速度，GB/s

15.0 15.5
写入速度，GB/s

10.3 11.8
内存带宽，mbps

17000 21300

Other

描述

PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2569 2968

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M378A4G43MB1-CTD 32GB

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Kingston 9905625-066.A00G 16GB

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AMD R5316G1609U2K 8GB

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Corsair CMK32GX4M4B3200C14 8GB

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Crucial Technology CT8G4DFD8213.16FA11 8GB

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Corsair CMWX8GD3000C16W4D 8GB

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Kingmax Semiconductor FLFE85F-C8KL9 2GB

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G Skill Intl F4-3733C17-8GTZKK 8GB

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Apacer Technology 78.01G86.9H50C 1GB

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Kingston 9905403-090.A01LF 4GB

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Crucial Technology CT8G4SFD8213.C16FBD2 8GB

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Kingston 9905471-006.A01LF 4GB

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Crucial Technology CT8G4DFS8213.M8FA 8GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

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Apacer Technology 78.C1GMM.AUW0C 8GB

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TwinMOS 8DPT5MK8-TATP 2GB

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