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Samsung M378A1G43DB0-CPB 8GB
Micron Technology 16ATF4G64HZ-3G2E2 32GB

Samsung M378A1G43DB0-CPB 8GB vs Micron Technology 16ATF4G64HZ-3G2E2 32GB

总分
star star star star star
Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

总分
star star star star star
Micron Technology 16ATF4G64HZ-3G2E2 32GB

Micron Technology 16ATF4G64HZ-3G2E2 32GB

差异 规格 评论

差异

Samsung M378A1G43DB0-CPB 8GB 需要考虑的原因
Samsung M378A1G43DB0-CPB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 43
    左右 16% 更低的延时
Micron Technology 16ATF4G64HZ-3G2E2 32GB 需要考虑的原因
Micron Technology 16ATF4G64HZ-3G2E2 32GB
报告一个错误
  • 更快的读取速度，GB/s
    15.5 left arrow 15
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.9 left arrow 10.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 17000
    左右 1.51 更高的带宽

规格

完整的技术规格清单
Samsung M378A1G43DB0-CPB 8GB
Micron Technology 16ATF4G64HZ-3G2E2 32GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 43
  • 读取速度，GB/s
    15.0 left arrow 15.5
  • 写入速度，GB/s
    10.3 left arrow 11.9
  • 内存带宽，mbps
    17000 left arrow 25600
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2569 left arrow 2864

Samsung M378A1G43DB0-CPB 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Micron Technology 16ATF4G64HZ-3G2E2 32GB RAM的比较

Kingston 9905403-156.A00LF 2GB
Kingston 9965525-155.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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内存RAM
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