Samsung M378A1G43DB0-CPB 8GB vs Micron Technology 4ATF51264HZ-2G3E1 4GB

总分

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

总分

Micron Technology 4ATF51264HZ-2G3E1 4GB

Micron Technology 4ATF51264HZ-2G3E1 4GB

差异规格评论

差异

Samsung M378A1G43DB0-CPB 8GB

需要考虑的原因
Samsung M378A1G43DB0-CPB 8GB

报告一个错误

更快的读取速度，GB/s

15 14.8

测试中的平均数值
更快的写入速度，GB/s

10.3 10.2

测试中的平均数值

Micron Technology 4ATF51264HZ-2G3E1 4GB

需要考虑的原因
Micron Technology 4ATF51264HZ-2G3E1 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 36

左右 -33% 更低的延时
更高的内存带宽，mbps

19200 17000

左右 1.13 更高的带宽

规格

完整的技术规格清单

Samsung M378A1G43DB0-CPB 8GB

Micron Technology 4ATF51264HZ-2G3E1 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

36 27
读取速度，GB/s

15.0 14.8
写入速度，GB/s

10.3 10.2
内存带宽，mbps

17000 19200

Other

描述

PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2569 2173

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMSX4GX3M1A1600C9 4GB

G Skill Intl F4-2666C15-4GRR 4GB

G Skill Intl F4-2666C15-4GRR 4GB

Samsung M378B1G73EB0-CK0 8GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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King Tiger Technology Tigo-2400MHz-8G 8GB

King Tiger Technology Tigo-2400MHz-8G 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology BLS4G4D26BFSB.8FB 4GB

Crucial Technology BLS4G4D26BFSB.8FB 4GB