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Samsung M378A1K43EB2-CWE 8GB
Crucial Technology BL16G32C16U4B.M16FE1 16GB

Samsung M378A1K43EB2-CWE 8GB vs Crucial Technology BL16G32C16U4B.M16FE1 16GB

总分
star star star star star
Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

总分
star star star star star
Crucial Technology BL16G32C16U4B.M16FE1 16GB

Crucial Technology BL16G32C16U4B.M16FE1 16GB

差异 规格 评论

差异

Samsung M378A1K43EB2-CWE 8GB 需要考虑的原因
Samsung M378A1K43EB2-CWE 8GB
报告一个错误
  • 更高的内存带宽，mbps
    25600 left arrow 21300
    左右 1.2% 更高的带宽
Crucial Technology BL16G32C16U4B.M16FE1 16GB 需要考虑的原因
Crucial Technology BL16G32C16U4B.M16FE1 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 33
    左右 -18% 更低的延时
  • 更快的读取速度，GB/s
    19.2 left arrow 17.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.5 left arrow 12.0
    测试中的平均数值

规格

完整的技术规格清单
Samsung M378A1K43EB2-CWE 8GB
Crucial Technology BL16G32C16U4B.M16FE1 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    33 left arrow 28
  • 读取速度，GB/s
    17.6 left arrow 19.2
  • 写入速度，GB/s
    12.0 left arrow 15.5
  • 内存带宽，mbps
    25600 left arrow 21300
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2910 left arrow 3698

Samsung M378A1K43EB2-CWE 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMSX32GX4M2A3200C22 16GB

Crucial Technology BL16G32C16U4B.M16FE1 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Crucial Technology CT51264BD160B.C16F 4GB
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Samsung M471A5244BB0-CRC 4GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Crucial Technology BL16G32C16U4B.M16FE1 16GB
Crucial Technology BL16G32C16U4B.M16FE1 16GB
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A-DATA Technology AM2U16BC4P2-B05B 4GB
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Wilk Elektronik S.A. IRX2666D464L16S/8G 8GB
内存RAM
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Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
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Corsair MK16GX44B3000C15 4GB
内存RAM
Kingston 9905458-017.A01LF 4GB
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内存RAM
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内存RAM
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内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
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Corsair CMR32GX4M2C3333C16 16GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
SK Hynix HMA451R7MFR8N-TFTD 4GB
SK Hynix HMA451R7MFR8N-TFTD 4GB
内存RAM
Samsung M4 70T2864QZ3-CF7 1GB
Samsung M4 70T2864QZ3-CF7 1GB
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Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB
内存RAM
Samsung M471B5273DH0-CK0 4GB
Samsung M471B5273DH0-CK0 4GB
Kingston 9905665-017.A00G 4GB
Kingston 9905665-017.A00G 4GB
内存RAM
Kingston HX424C15FB/8 8GB
Kingston HX424C15FB/8 8GB
Corsair CMK16GX4M2A2400C14 8GB
Corsair CMK16GX4M2A2400C14 8GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
SK Hynix HMA41GU7AFR8N-TF 8GB
SK Hynix HMA41GU7AFR8N-TF 8GB
内存RAM