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Samsung M378A1K43EB2-CWE 8GB
G Skill Intl F4-3200C16-16GTZRX 16GB

Samsung M378A1K43EB2-CWE 8GB vs G Skill Intl F4-3200C16-16GTZRX 16GB

总分
star star star star star
Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

总分
star star star star star
G Skill Intl F4-3200C16-16GTZRX 16GB

G Skill Intl F4-3200C16-16GTZRX 16GB

差异 规格 评论

差异

Samsung M378A1K43EB2-CWE 8GB 需要考虑的原因
Samsung M378A1K43EB2-CWE 8GB
报告一个错误
  • 更高的内存带宽，mbps
    25600 left arrow 17000
    左右 1.51% 更高的带宽
G Skill Intl F4-3200C16-16GTZRX 16GB 需要考虑的原因
G Skill Intl F4-3200C16-16GTZRX 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 33
    左右 -22% 更低的延时
  • 更快的读取速度，GB/s
    18.4 left arrow 17.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.1 left arrow 12.0
    测试中的平均数值

规格

完整的技术规格清单
Samsung M378A1K43EB2-CWE 8GB
G Skill Intl F4-3200C16-16GTZRX 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    33 left arrow 27
  • 读取速度，GB/s
    17.6 left arrow 18.4
  • 写入速度，GB/s
    12.0 left arrow 15.1
  • 内存带宽，mbps
    25600 left arrow 17000
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2910 left arrow 3711

Samsung M378A1K43EB2-CWE 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMSX32GX4M2A3200C22 16GB

G Skill Intl F4-3200C16-16GTZRX 16GB RAM的比较

Kingston ACR512X64D3S13C9G 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Crucial Technology CT8G4DFS8213.C8FBR1 8GB
Crucial Technology CT8G4DFS8213.C8FBR1 8GB
Crucial Technology CT8G4DFS8213.M8FA 8GB
Crucial Technology CT8G4DFS8213.M8FA 8GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
G Skill Intl F4-3200C16-16GTZRX 16GB
G Skill Intl F4-3200C16-16GTZRX 16GB
内存RAM
Elpida EBJ21UE8BDS0-DJ-F 2GB
Elpida EBJ21UE8BDS0-DJ-F 2GB
Crucial Technology BLE4G4D26AFEA.8FAD 4GB
Crucial Technology BLE4G4D26AFEA.8FAD 4GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Corsair CMK64GX4M4D3000C16 16GB
Corsair CMK64GX4M4D3000C16 16GB
内存RAM
Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
G Skill Intl F4-3600C18-16GTRG 16GB
G Skill Intl F4-3600C18-16GTRG 16GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB
内存RAM
Kingston KF552C40-16 16GB
Kingston KF552C40-16 16GB
Corsair CMK16GX4M4A2133C13 4GB
Corsair CMK16GX4M4A2133C13 4GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
Crucial Technology BLS8G4D240FSB.16FAR 8GB
Crucial Technology BLS8G4D240FSB.16FAR 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
G Skill Intl F4-2933C16-16GFX 16GB
G Skill Intl F4-2933C16-16GFX 16GB
内存RAM
SK Hynix HMA82GS6CJR8N-VK 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
Corsair MK16GX4M2B3200C16 8GB
Corsair MK16GX4M2B3200C16 8GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N
内存RAM
Kingston KHX318C10FR/8G 8GB
Kingston KHX318C10FR/8G 8GB
Kingston ACR26D4S9S8KA-8 8GB
Kingston ACR26D4S9S8KA-8 8GB
内存RAM
Kingston 99U5474-023.A00LF 4GB
Kingston 99U5474-023.A00LF 4GB
Kingston LV32D4S2S8HD-8 8GB
Kingston LV32D4S2S8HD-8 8GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AO2P21FC4R1-BRFS 4GB
A-DATA Technology AO2P21FC4R1-BRFS 4GB
内存RAM