Samsung M378A1K43EB2-CWE 8GB vs Gloway International Co. Ltd. TYA4U2666D19161C 16GB

总分

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

总分

Gloway International Co. Ltd. TYA4U2666D19161C 16GB

Gloway International Co. Ltd. TYA4U2666D19161C 16GB

差异规格评论

差异

Samsung M378A1K43EB2-CWE 8GB

需要考虑的原因
Samsung M378A1K43EB2-CWE 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 50

左右 34% 更低的延时
更快的读取速度，GB/s

17.6 12.5

测试中的平均数值
更快的写入速度，GB/s

12.0 7.3

测试中的平均数值
更高的内存带宽，mbps

25600 21300

左右 1.2% 更高的带宽

Gloway International Co. Ltd. TYA4U2666D19161C 16GB

需要考虑的原因
Gloway International Co. Ltd. TYA4U2666D19161C 16GB

报告一个错误

规格

完整的技术规格清单

Samsung M378A1K43EB2-CWE 8GB

Gloway International Co. Ltd. TYA4U2666D19161C 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

33 50
读取速度，GB/s

17.6 12.5
写入速度，GB/s

12.0 7.3
内存带宽，mbps

25600 21300

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2910 2326

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-3200C16-4GVK 4GB

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Elpida EBJ41UF8BDW0-GN-F 4GB

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Team Group Inc. 16GB

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Samsung M391B5673EH1-CH9 2GB

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Kingston ACR26D4S9S1ME-4 4GB

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Kingston 9905403-061.A00LF 2GB

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SK Hynix HMA81GS6MFR8N-UH 8GB

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Crucial Technology BLT2G3D1608DT1TX0 2GB

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Samsung M393B1G70BH0-YK0 8GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A

Crucial Technology CT8G4DFD8213.C16FBD1 8GB

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Crucial Technology CT51264BA1339.C16F 4GB

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Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N