Samsung M378A5244CB0-CTD 4GB vs Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB

总分

Samsung M378A5244CB0-CTD 4GB

Samsung M378A5244CB0-CTD 4GB

总分

Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB

Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB

差异规格评论

差异

Samsung M378A5244CB0-CTD 4GB

需要考虑的原因
Samsung M378A5244CB0-CTD 4GB

报告一个错误

低于PassMark测试中的延时，ns

36 37

左右 3% 更低的延时

Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB

需要考虑的原因
Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB

报告一个错误

更快的读取速度，GB/s

16.9 15.8

测试中的平均数值
更快的写入速度，GB/s

13.8 11.8

测试中的平均数值
更高的内存带宽，mbps

25600 21300

左右 1.2 更高的带宽

规格

完整的技术规格清单

Samsung M378A5244CB0-CTD 4GB

Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

36 37
读取速度，GB/s

15.8 16.9
写入速度，GB/s

11.8 13.8
内存带宽，mbps

21300 25600

Other

描述

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2497 3170

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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InnoDisk Corporation M4U0-8GSSKCSJ 8GB

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AMD R534G1601U1S-UO 4GB

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Crucial Technology CT8G4SFD824A.C16FE 8GB

Crucial Technology CT8G4SFD824A.C16FE 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

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Smart Modular SF4641G8CK8IWGKSEG 8GB

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Corsair CMWX16GC3600C18W2D 16GB

Corsair CMWX16GC3600C18W2D 16GB