Samsung M378B1G73EB0-CK0 8GB vs Mushkin MES4S213FF16G28 16GB

总分

Samsung M378B1G73EB0-CK0 8GB

Samsung M378B1G73EB0-CK0 8GB

总分

Mushkin MES4S213FF16G28 16GB

Mushkin MES4S213FF16G28 16GB

差异规格评论

差异

Samsung M378B1G73EB0-CK0 8GB

需要考虑的原因
Samsung M378B1G73EB0-CK0 8GB

报告一个错误

Mushkin MES4S213FF16G28 16GB

需要考虑的原因
Mushkin MES4S213FF16G28 16GB

报告一个错误

低于PassMark测试中的延时，ns

36 41

左右 -14% 更低的延时
更快的读取速度，GB/s

13.8 13.3

测试中的平均数值
更快的写入速度，GB/s

11.2 8.5

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M378B1G73EB0-CK0 8GB

Mushkin MES4S213FF16G28 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 36
读取速度，GB/s

13.3 13.8
写入速度，GB/s

8.5 11.2
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2322 2550

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Mushkin MES4S213FF16G28 16GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

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SK Hynix HMT325S6BFR8C-H9 2GB

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Corsair CMK64GX4M4C3200C16 16GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Samsung M378B5273DH0-CH9 4GB

Hewlett-Packard 7EH55AA# 8GB

Hewlett-Packard 7EH55AA# 8GB

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TwinMOS 9DNPBNZB-TATP 4GB

Smart Modular SF4641G8CKHI6DFSDS 8GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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G Skill Intl F4-3200C16-16GTZN 16GB

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

Essencore Limited KD4AGS88C-32N220D 16GB

Essencore Limited KD4AGS88C-32N220D 16GB

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Apacer Technology 78.A1GC6.9H10C 2GB

A-DATA Technology AM1P26KC8T1-BAAS 8GB

A-DATA Technology AM1P26KC8T1-BAAS 8GB