Samsung M378B5173BH0-CH9 4GB vs Team Group Inc. Team--Elite-1333 4GB

总分

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

总分

Team Group Inc. Team--Elite-1333 4GB

Team Group Inc. Team--Elite-1333 4GB

差异规格评论

差异

Samsung M378B5173BH0-CH9 4GB

需要考虑的原因
Samsung M378B5173BH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 37

左右 38% 更低的延时

Team Group Inc. Team--Elite-1333 4GB

需要考虑的原因
Team Group Inc. Team--Elite-1333 4GB

报告一个错误

更快的写入速度，GB/s

8.3 8.0

测试中的平均数值

规格

完整的技术规格清单

Samsung M378B5173BH0-CH9 4GB

Team Group Inc. Team--Elite-1333 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

23 37
读取速度，GB/s

13.4 13.4
写入速度，GB/s

8.0 8.3
内存带宽，mbps

10600 10600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC3-10600, 1.5V, CAS Supported: 6 7 8 9
时序/时钟速度

7-7-7-20 / 1333 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

2269 2068

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378A5244CB0-CTD 4GB

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Samsung M3 78T5663RZ3-CF7 2GB

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Micron Technology 16ATF2G64AZ-3G2J1 16GB

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Samsung M378B5173BH0-CH9 4GB

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Team Group Inc. Team--Elite-1333 4GB

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G Skill Intl F5-6400J3239G16G 16GB

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Kingston ACR256X64D3S1333C9 2GB

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SK Hynix HMT125S6TFR8C-H9 2GB

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Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

G Skill Intl F4-3200C16-32GVK 32GB

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Kingston 9905403-156.A00LF 2GB

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InnoDisk Corporation M4U0-8GSSKCSJ 8GB

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Ramos Technology RMB4GB58BCA3-13HC 4GB

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A-DATA Technology AO1E34RCTV2-BZWS 32GB

A-DATA Technology AO1E34RCTV2-BZWS 32GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Corsair CM4X16GE2133C13K8 16GB

Corsair CM4X16GE2133C13K8 16GB

SK Hynix HYMP125U64CP8-S6 2GB

SK Hynix HYMP125U64CP8-S6 2GB

Corsair CMK32GX4M2A2133C13 16GB

Corsair CMK32GX4M2A2133C13 16GB

Samsung M471B1G73BH0-YK0 8GB

Samsung M471B1G73BH0-YK0 8GB

Transcend Information TS1GLH64V4H 8GB

Transcend Information TS1GLH64V4H 8GB