Samsung M378B5173EB0-CK0 4GB vs Crucial Technology CT16G4SFD832A.C16FP 16GB

总分

Samsung M378B5173EB0-CK0 4GB

Samsung M378B5173EB0-CK0 4GB

总分

Crucial Technology CT16G4SFD832A.C16FP 16GB

Crucial Technology CT16G4SFD832A.C16FP 16GB

差异规格评论

差异

Samsung M378B5173EB0-CK0 4GB

需要考虑的原因
Samsung M378B5173EB0-CK0 4GB

报告一个错误

Crucial Technology CT16G4SFD832A.C16FP 16GB

需要考虑的原因
Crucial Technology CT16G4SFD832A.C16FP 16GB

报告一个错误

低于PassMark测试中的延时，ns

34 42

左右 -24% 更低的延时
更快的读取速度，GB/s

16.6 13.9

测试中的平均数值
更快的写入速度，GB/s

14.3 8.1

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung M378B5173EB0-CK0 4GB

Crucial Technology CT16G4SFD832A.C16FP 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 34
读取速度，GB/s

13.9 16.6
写入速度，GB/s

8.1 14.3
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2150 3282

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M378B5173EB0-CK0 4GB

Samsung M378B5173EB0-CK0 4GB

Crucial Technology CT16G4SFD832A.C16FP 16GB

Crucial Technology CT16G4SFD832A.C16FP 16GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Corsair CMK16GX4M4A2400C16 4GB

Corsair CMK16GX4M4A2400C16 4GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A

Corsair CMW16GX4M2K4000C19 8GB

Corsair CMW16GX4M2K4000C19 8GB

Kingston 99U5471-056.A00LF 8GB

Kingston 99U5471-056.A00LF 8GB

Samsung M391A1G43EB1-CRC 8GB

Samsung M391A1G43EB1-CRC 8GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Crucial Technology CT16G4DFD824A.C16FAD 16GB

Crucial Technology CT16G4DFD824A.C16FAD 16GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

G Skill Intl F4-4000C16-8GTZRA 8GB

G Skill Intl F4-4000C16-8GTZRA 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F4-2400C15-8GVS 8GB

G Skill Intl F4-2400C15-8GVS 8GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Panram International Corporation W4U2666P-8G 8GB

Panram International Corporation W4U2666P-8G 8GB

Kingston 99U5458-008.A00LF 4GB

Kingston 99U5458-008.A00LF 4GB

Kingston HP32D4S2S8ME-16 16GB

Kingston HP32D4S2S8ME-16 16GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

G Skill Intl F4-4266C17-8GTZR 8GB

G Skill Intl F4-4266C17-8GTZR 8GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

G Skill Intl F4-4000C18-8GTRG 8GB

G Skill Intl F4-4000C18-8GTRG 8GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

Micron Technology 8ATF1G64HZ-2G3A1 8GB

Micron Technology 8ATF1G64HZ-2G3A1 8GB

Kingston 9905471-054.A00LF 8GB

Kingston 9905471-054.A00LF 8GB

Kingston 9905711-035.A00G 8GB

Kingston 9905711-035.A00G 8GB