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Samsung M378B5173EB0-CK0 4GB
Gloway International (HK) STK4U2400D17081C 8GB

Samsung M378B5173EB0-CK0 4GB vs Gloway International (HK) STK4U2400D17081C 8GB

总分
star star star star star
Samsung M378B5173EB0-CK0 4GB

Samsung M378B5173EB0-CK0 4GB

总分
star star star star star
Gloway International (HK) STK4U2400D17081C 8GB

Gloway International (HK) STK4U2400D17081C 8GB

差异 规格 评论

差异

Samsung M378B5173EB0-CK0 4GB 需要考虑的原因
Samsung M378B5173EB0-CK0 4GB
报告一个错误
Gloway International (HK) STK4U2400D17081C 8GB 需要考虑的原因
Gloway International (HK) STK4U2400D17081C 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 42
    左右 -83% 更低的延时
  • 更快的读取速度，GB/s
    17.1 left arrow 13.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.5 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Samsung M378B5173EB0-CK0 4GB
Gloway International (HK) STK4U2400D17081C 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 23
  • 读取速度，GB/s
    13.9 left arrow 17.1
  • 写入速度，GB/s
    8.1 left arrow 12.5
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2150 left arrow 2960

Samsung M378B5173EB0-CK0 4GB RAM的比较

Crucial Technology CT51264BA1339.M16F 4GB
Essencore Limited KD48GU880-26N160T 8GB

Gloway International (HK) STK4U2400D17081C 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905471-002.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Gloway International (HK) STK4U2400D17082C 8GB
Gloway International (HK) STK4U2400D17082C 8GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
Corsair MK16GX44B3000C15 4GB
Corsair MK16GX44B3000C15 4GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
Apacer Technology GD2.11173T.001 4GB
Apacer Technology GD2.11173T.001 4GB
内存RAM
Kingston KVR800D2N6/2G 2GB
Kingston KVR800D2N6/2G 2GB
Netac Technology Co Ltd EKBLUE4162417AD 8GB
Netac Technology Co Ltd EKBLUE4162417AD 8GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Wilk Elektronik S.A. IR2400D464L17S/4G 4GB
Wilk Elektronik S.A. IR2400D464L17S/4G 4GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
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Gold Key Technology Co Ltd NMSO432F82-3200E 32GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
G Skill Intl F4-4000C16-16GVK 16GB
G Skill Intl F4-4000C16-16GVK 16GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
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V-GEN D4H8GL26A8TS6 8GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
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Heoriady HX2666DT8G-TD 8GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
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Corsair CM4X16GE2933C19S2 16MB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
SK Hynix HMA82GR7MFR8N-UH 16GB
SK Hynix HMA82GR7MFR8N-UH 16GB
内存RAM
Kingston ACR16D3LS1KNG/4G 4GB
Kingston ACR16D3LS1KNG/4G 4GB
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
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Team Group Inc. TEAMGROUP-lnd-2133 8GB
内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
内存RAM