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Samsung M378B5173EB0-CK0 4GB
V-Color Technology Inc. TD416G26D819-VC 16GB

Samsung M378B5173EB0-CK0 4GB vs V-Color Technology Inc. TD416G26D819-VC 16GB

总分
star star star star star
Samsung M378B5173EB0-CK0 4GB

Samsung M378B5173EB0-CK0 4GB

总分
star star star star star
V-Color Technology Inc. TD416G26D819-VC 16GB

V-Color Technology Inc. TD416G26D819-VC 16GB

差异 规格 评论

差异

Samsung M378B5173EB0-CK0 4GB 需要考虑的原因
Samsung M378B5173EB0-CK0 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    42 left arrow 66
    左右 36% 更低的延时
V-Color Technology Inc. TD416G26D819-VC 16GB 需要考虑的原因
V-Color Technology Inc. TD416G26D819-VC 16GB
报告一个错误
  • 更快的读取速度，GB/s
    16.5 left arrow 13.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.0 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung M378B5173EB0-CK0 4GB
V-Color Technology Inc. TD416G26D819-VC 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 66
  • 读取速度，GB/s
    13.9 left arrow 16.5
  • 写入速度，GB/s
    8.1 left arrow 9.0
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2150 left arrow 1934

Samsung M378B5173EB0-CK0 4GB RAM的比较

Crucial Technology CT51264BA1339.M16F 4GB
Essencore Limited KD48GU880-26N160T 8GB

V-Color Technology Inc. TD416G26D819-VC 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M378B5173EB0-CK0 4GB
Samsung M378B5173EB0-CK0 4GB
V-Color Technology Inc. TD416G26D819-VC 16GB
V-Color Technology Inc. TD416G26D819-VC 16GB
内存RAM
Apacer Technology AQD-D4U8GN24-SE 8GB
Apacer Technology AQD-D4U8GN24-SE 8GB
Kingston KHX2400C15D4/8G 8GB
Kingston KHX2400C15D4/8G 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Crucial Technology CT8G4SFD824A.C16FBD1 8GB
Crucial Technology CT8G4SFD824A.C16FBD1 8GB
内存RAM
Elpida EBJ81UG8BBU0-GN-F 8GB
Elpida EBJ81UG8BBU0-GN-F 8GB
Crucial Technology CT4G4SFS8266.C8FE 4GB
Crucial Technology CT4G4SFS8266.C8FE 4GB
内存RAM
Kingston 99U5471-056.A00LF 8GB
Kingston 99U5471-056.A00LF 8GB
Apacer Technology GD2.1140CH.001 4GB
Apacer Technology GD2.1140CH.001 4GB
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Crucial Technology CT102464BD160B.M16 8GB
Crucial Technology CT102464BD160B.M16 8GB
Crucial Technology CT8G4SFS8213.M8FB 8GB
Crucial Technology CT8G4SFS8213.M8FB 8GB
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AMD AE34G2139U2 4GB
AMD AE34G2139U2 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Crucial Technology CT4G4DFS8213.C8FAR 4GB
Crucial Technology CT4G4DFS8213.C8FAR 4GB
内存RAM
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Apacer Technology 78.01G86.9H50C 1GB
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G Skill Intl F4-4400C19-32GVK 32GB
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PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
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Corsair CMK16GX4M2Z4000C18 8GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Crucial Technology CT8G4SFS8213.M8FB 8GB
Crucial Technology CT8G4SFS8213.M8FB 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
SK Hynix HYMP525F72CP4D3-Y5 2GB
SK Hynix HYMP525F72CP4D3-Y5 2GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
Crucial Technology CT4G4DFS8266.C8FB 4GB
Crucial Technology CT4G4DFS8266.C8FB 4GB
内存RAM
Kingston 9905402-665.A00LF 4GB
Kingston 9905402-665.A00LF 4GB
G Skill Intl F4-3200C14-16GTRG 16GB
G Skill Intl F4-3200C14-16GTRG 16GB
内存RAM