Samsung M391B5673EH1-CH9 2GB vs SK Hynix HYMP525F72CP4D3-Y5 2GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

SK Hynix HYMP525F72CP4D3-Y5 2GB

SK Hynix HYMP525F72CP4D3-Y5 2GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 79

左右 67% 更低的延时
更快的写入速度，GB/s

9.0 2,121.4

测试中的平均数值
更高的内存带宽，mbps

10600 5300

左右 2% 更高的带宽

SK Hynix HYMP525F72CP4D3-Y5 2GB

需要考虑的原因
SK Hynix HYMP525F72CP4D3-Y5 2GB

报告一个错误

更快的读取速度，GB/s

2 12.8

测试中的平均数值

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

SK Hynix HYMP525F72CP4D3-Y5 2GB

主要特点

存储器类型

DDR3 DDR2
PassMark中的延时，ns

26 79
读取速度，GB/s

12.8 2,925.4
写入速度，GB/s

9.0 2,121.4
内存带宽，mbps

10600 5300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC-5300, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5
时序/时钟速度

7-7-7-20 / 1333 MHz no data
排名PassMark (越多越好)

2143 750

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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