SK Hynix HMT325S6BFR8C-H9 2GB vs Micron Technology 16ATF2G64HZ-2G1B1 16GB

总分

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

总分

Micron Technology 16ATF2G64HZ-2G1B1 16GB

Micron Technology 16ATF2G64HZ-2G1B1 16GB

差异规格评论

差异

SK Hynix HMT325S6BFR8C-H9 2GB

需要考虑的原因
SK Hynix HMT325S6BFR8C-H9 2GB

报告一个错误

Micron Technology 16ATF2G64HZ-2G1B1 16GB

需要考虑的原因
Micron Technology 16ATF2G64HZ-2G1B1 16GB

报告一个错误

低于PassMark测试中的延时，ns

36 41

左右 -14% 更低的延时
更快的读取速度，GB/s

13.9 11.6

测试中的平均数值
更快的写入速度，GB/s

10.1 7.3

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT325S6BFR8C-H9 2GB

Micron Technology 16ATF2G64HZ-2G1B1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 36
读取速度，GB/s

11.6 13.9
写入速度，GB/s

7.3 10.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1438 2581

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Micron Technology 16ATF2G64HZ-2G1B1 16GB

Micron Technology 16ATF2G64HZ-2G1B1 16GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Mushkin 99[2/7/4]192[F/T] 4GB

Mushkin 99[2/7/4]192[F/T] 4GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Corsair CMD128GX4M8A2400C14 16GB

Corsair CMD128GX4M8A2400C14 16GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

Corsair CMK32GX4M4K4133C19 8GB

Corsair CMK32GX4M4K4133C19 8GB

Kingston 9905458-017.A01LF 4GB

Kingston 9905458-017.A01LF 4GB

G Skill Intl F4-4000C17-8GTZRB 8GB

G Skill Intl F4-4000C17-8GTZRB 8GB

Kingston 9905403-515.A00LF 8GB

Kingston 9905403-515.A00LF 8GB

Corsair CMW16GX4M2Z2933C16 8GB

Corsair CMW16GX4M2Z2933C16 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 8ATF1G64AZ-2G3B1 8GB

Micron Technology 8ATF1G64AZ-2G3B1 8GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Samsung M393A4K40CB1-CRC 32GB

Samsung M393A4K40CB1-CRC 32GB

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

Crucial Technology CT8G4SFS832A.M8FRS 8GB

Crucial Technology CT8G4SFS832A.M8FRS 8GB

Kingston 9905584-016.A00LF 4GB

Kingston 9905584-016.A00LF 4GB

Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

SK Hynix HMA81GS6CJRJR-VK 8GB

SK Hynix HMA81GS6CJRJR-VK 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Samsung M393A2G40EB2-CTD 16GB

Samsung M393A2G40EB2-CTD 16GB

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Kingston 9905471-006.A00LF 4GB

Kingston 9905471-006.A00LF 4GB

Hyundai Inc GP-GR26C16S8K1HU408 8GB

Hyundai Inc GP-GR26C16S8K1HU408 8GB