Samsung M378B5273CH0-CH9 4GB vs AMD R334G1339U2S 4GB

总分

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

总分

AMD R334G1339U2S 4GB

AMD R334G1339U2S 4GB

差异规格评论

差异

Samsung M378B5273CH0-CH9 4GB

需要考虑的原因
Samsung M378B5273CH0-CH9 4GB

报告一个错误

更快的读取速度，GB/s

13.2 9

测试中的平均数值
更快的写入速度，GB/s

8.4 4.8

测试中的平均数值

AMD R334G1339U2S 4GB

需要考虑的原因
AMD R334G1339U2S 4GB

报告一个错误

低于PassMark测试中的延时，ns

29 37

左右 -28% 更低的延时

规格

完整的技术规格清单

Samsung M378B5273CH0-CH9 4GB

AMD R334G1339U2S 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

37 29
读取速度，GB/s

13.2 9.0
写入速度，GB/s

8.4 4.8
内存带宽，mbps

10600 10600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC3-10600, 1.5V, CAS Supported: 6 7 8 9
时序/时钟速度

7-7-7-20 / 1333 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

2143 1726

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378B5673EH1-CF8 2GB

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Samsung M471A5143SB1-CRC 4GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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G Skill Intl F4-4133C19-8GTZA 8GB

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SK Hynix HYMP112S64CP6-S6 1GB

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Ramsta Ramsta-2400Mhz-4G 4GB

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Kingston 99U5474-010.A00LF 2GB

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Micron Technology 8ATF1G64HZ-2G3A1 8GB

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Samsung M378B1G73EB0-CK0 8GB

Samsung M378B1G73EB0-CK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

AMD R334G1339U2S 4GB

AMD R334G1339U2S 4GB

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PUSKILL DDR3 1600 8G 8GB

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G Skill Intl F4-3200C16-16GTZKW 16GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

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Corsair CM4X4GF2400Z16K4 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

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G Skill Intl F4-3600C16-8GTZR 8GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

Corsair CM4X4GF2400Z16K4 4GB

Corsair CM4X4GF2400Z16K4 4GB